Asml Netherlands B.v.

Rudy Jan Maria Pellens

Cheng-Qun Gui

Keith Frank Best

Paulus Wilhelmus Leonardus Van Dijk

Arno Jan Bleeker

Johannes Henricus Wilhelmus Jacobs

Pieter Willem Herman De Jager

Marco Koert Stavenga

Johannes Onvlee

Richard Joseph Bruls

Heine Melle Mulder

Paulus Martinus Maria Liebregts

Henricus Wilhelmus Maria Van Buel

Youri Johannes Laurentius Maria Van Dommelen

Jan Cornelis Van Der Hoeven

Gert-Jan Gerardus Johannes Thomas Brands

Remi Daniel Marie Edart

Oleg Voznyi

Marcus Johannes Van Der Zanden

Coen Cornelis Wilhelmus Verspaget

David Lucien Anstotz

Casper Roderik De Groot

Pascale Anne Maury

Vijay Kumar Badam

Geoffrey Norman Phillipps

Dries Smeets

Johannes Wilhelmus Maria Krikhaar

Thijs Egidius Johannes Knaapen

Rudolf Adrianus Joannes Maas

Budiman Sutedja

Christopher James Lee

Martijn Hendrik Kamphuis

Johannes Paulus Adrianus Maria Van Den Heuvel

A radiation modulator for a lithography apparatus, a lithography apparatus, a method of modulating radiation for use in lithography, and a device manufacturing method is disclosed. The radiation modulator for a lithography apparatus may have a plurality of waveguides supporting propagation therethough of radiation having a wavelength less than 450 nm; and a modulating section configured to individually modulate radiation propagating in each of the waveguides in order to provide a modulated plurality of output beams.

Radiation modulator for a lithography apparatus, a lithography apparatus, a method of modulating radiation for use in lithography, and a device manufacturing method

A lithographic apparatus having a table including a target and/or a sensor and a liquid displacing device to displace liquid from the target and/or sensor using a localized gas flow is disclosed. The liquid displacement device may be positioned at various positions, e.g. mounted to a liquid handling device at an exposure station, adjacent or in a transfer path between the exposure station and a measurement station, at a load/unload station or adjacent a sensor.

Lithographic apparatus and device manufacturing method

According to a first aspect of the invention, there is provided a lithographic method of providing an alignment mark on a layer provided on a substrate, the method including providing the alignment mark on an area of the layer which is oriented within a certain range of angles with respect to a surface of the substrate on which the layer is provided.

Lithographic apparatus and method

A method of producing a T-gate in a single stage exposure process using electromagnetic radiation is disclosed.

Device manufacturing method and substrate comprising multiple resist layers

A lithographic method includes patterning a beam of radiation with a patterning device. The patterning device includes at least two image patterning portions and at least two metrology mark patterning portions. The method also includes projecting at least two image portions of the patterned beam of radiation sequentially onto target portions of a substrate such that the projected image portions are substantially adjacent to each other on the substrate and collectively form a composite image on the substrate. The method also includes projecting a metrology mark onto the substrate outside of the area of the composite image at the same time as projecting each of at least two of the image portions, and measuring the alignment of the metrology marks to determine the relative positions of the at least two image portions.

Lithographic method and patterning device

According to an aspect of the present invention, there is provided a lithographic apparatus that includes a substrate carrier arranged to hold a substrate in position using an electrostatic force. The substrate carrier is provided with an integral power source. The apparatus also includes a substrate table for holding the substrate carrier.

A second substrate, e.g. a III/V compound semiconductor, is placed on a first substrate, e.g. a wafer, in the vicinity of placement marks on the first substrate. The second substrate is exposed to patterned radiation, e.g. for the manufacture of integrated circuits.

Substrate holder and device manufacturing method

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Overpelt, Belgium

Rudy Jan Maria Pellens