Advanced Micro-Fabrication Equipment Inc. China

Rubin Ye

Leyi Tu

Tuqiang Q Ni

Lei Wu

Jie Liang

Kuan Yang

Yichuan Zhang

Bryan Pu

Manus Wong

Ziyang Wu

The present disclosure provides a lower electrode assembly and a plasma processing device in which the lower electrode assembly is located. The lower electrode assembly includes a base, including a main part and a step part extending outwardly from the main part, the step part being provided with a screw hole; a dielectric ring, disposed on the step part around the main part, a groove being formed in a bottom of the dielectric ring, and an opening of the groove being able to cover an opening of the screw hole; and a screw, having a head being located in the groove. By forming the groove inside the dielectric ring at an outer edge of the base, the head of the screw fixing the base is arranged in the groove so as to reduce a diameter of the hole formed in the base, so that an edge of the screw hole can be completely covered by the dielectric ring, and since the dielectric ring is made of an insulating material, a technical effect of avoiding arcing at the edge of the screw hole can be achieved.

Lower electrode assembly and plasma processing device

A plasma reactor includes: a process chamber, at the inner bottom of the process chamber being provided a base, the base being connected to a RF power source via a RF match network, wherein a to-be-processed wafer is held above the base, an upper electrode assembly is provided at the inner top of the process chamber, and a plasma processing space is arranged between the base and the upper electrode assembly; a first conductive ground ring surrounding the outer periphery of the base; a second conductive ground ring connected between the outer sidewall of the first conductive ground ring and the inner sidewall of the process chamber, a plurality of gas channels being provided on the second conductive ground ring such that gas in the plasma processing space can be exhausted through the plurality of gas channels; an insulating ring provided between the base and the first conductive ground ring, wherein dielectric constant of the insulating ring is less than 3.5.

Plasma reactor

Disclosed are a lift pin assembly, an electrostatic chuck with the lift pin assembly, and a processing apparatus where the electrostatic chuck is located. The lift pin assembly comprises: a lift pin, a lift pin receiving channel connected to a pressure control device, one end of the lift pin receiving channel proximal to a wafer being provided with a sealing ring, an upper surface of the sealing ring being in contact with a back face of the wafer during processing to avoid a gas at the back face of the wafer from entering the lift pin receiving channel, thereby enabling the pressure control device to independently control the pressure in the lift pin receiving channel.

Lift pin assembly, an electrostatic chuck and a processing apparatus where the electrostatic chuck is located

The present invention provides a temperature adjusting apparatus for a focus ring, wherein heat radiated from the plasma onto the focus ring is transferred downward to a base through the first heat conducting pad contacting a lower surface of the focus ring, an insulating ring contacting a lower surface of the first heat conducting pad, and the second heat conducting pad contacting a lower surface of the insulating ring, so as to be cooled by a cooling system provided at the base; turning on a heater disposed in a grounded shielding ring to generate a controllable external heating source, heat from the heater being transferred to the focus ring through the shielding ring, a third heat conducting pad contacting the shielding ring, the insulating ring contacting the third heat conducting pad, and the first heat conducting pad, so as to perform controllable warming to the focus ring. By providing a good heat conduction path in conjunction with controllable heating power, the present invention achieves a fine control of the working temperature of the focus ring such that it is tunable in processing such as etching, thereby satisfying processing demands.

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Shanghai, China

Rubin Ye