National Semiconductor Corporation

Fairchild Semiconductor Corporation

Fairchild Semiconductor Corporaton

Roy L Yarbrough

James R Ohannes

Stephen W Clukey

Kenneth Patrick Snowdon

Julio R Estrada

E David Haacke

Ernest D Haacke

Julie Lynn Stultz

Steven M Macaluso

Jay R Chapin

Susan M Keown

Michael G Ward

James Hall

Hrvoje Jasa

Nickole Gagne

James B Boomer

Lars G Jansson

William Robert Newberry

Douglas Michael Hannan

Duane G Quiet

Richard W Cook

Stephen James O'Brien

In a general aspect, a circuit can include a first resistor configured to be coupled to a first terminal of a temperature-sensitive resistance, a second resistor configured to be coupled to a second terminal of the temperature-sensitive resistance and a temperature information circuit. The temperature information circuit can be configured to: receive a first voltage from the first terminal of the temperature-sensitive resistance; receive a second voltage from the second terminal of the temperature-sensitive resistance; and provide temperature information based on the first voltage and the second voltage. The temperature information circuit can include a first comparison circuit configured to determine a difference between the first voltage and the second voltage, and a second comparison circuit configured to compare an output of the first comparison circuit to a reference.

Differential thermistor circuit

This document discusses, among other things, an apparatus and method for providing temperature information. In an example, an integrated circuit apparatus can include a first resistor configured to be coupled to a first terminal of a temperature-sensitive resistance, a second resistor configured to be coupled to a second terminal of the temperature-sensitive resistance, and a temperature information circuit configured to receive a first voltage from the first terminal of the temperature-sensitive resistance and a second voltage from the second terminal of the temperature-sensitive resistance. The temperature information circuit can provide the temperature information using the first and second voltages.

Fuse driver circuits, fuse driver testing circuitry, and methods for testing the fuse driver circuits using the testing circuitry are described. In some embodiments, the fuse driver circuit can be made using a fuse, a NMOS transistor, and a PMOS transistor. The drain of the NMOS transistor can be connected to the negative end of the fuse. The source of the NMOS transistor can be connected to ground. The drain of the PMOS transistor can be connected to a positive end of the fuse. The NMOS and PMOS transistors provide enhanced robustness to the fuse driver circuit in both undervoltage and overvoltage conditions. Other embodiments are also described.

Fuse driver circuits

An output buffer utilizes capacitive feedback to control the output slew rate largely independent of load capacitance. The invention slows the rising and falling slew rates and via a capacitance feedback reduces the effect of load capacitance on slew rate, and uses no DC current. Transistor switches are employed to isolate and reduce noise and interaction among the circuit components and functions.

Low speed, load independent, slew rate controlled output buffer with no DC power consumption

A circuit that automatically, seamlessly connects the higher (or the lower) of two power supplies to an output is described. The circuit does not incur a one diode drop when the two power supplies are at about the same voltage levels, and the unused power supply draws no stand-by current. Cross coupled transistor and cross coupled inverters are employed.

Power latch

A circuit is described that when the power supply to circuits that control a pass transistor is at zero volts, the pass transistor configured as a voltage level translator remains off regardless of the voltages and changes in voltages at the ports connected to the pass transistor. Cross coupled transistors provide a mechanism where the higher of the port voltages is available to power circuitry that maintains the control input of the pass transistor in the off condition. The voltages at the ports may rise and fall relative to each other, but the control input of the pass transistor will keep the pass transistor off.

Power supply insensitive voltage level translator

The invention is directed to an apparatus and a method for generating a fault detection signal when a differential signal is in a fault condition. The fault condition arises when the data transmission path in a differential signaling device is either open, shorted, or terminated by an abnormal means, and is such that the inputs are within the valid common-mode range and a valid differential signal cannot be obtained. The invention is buffered from the differential signal source, and an intermediate signal is produced in response to the differential signal. Portions of the intermediate signal are compared to a reference signal, and based on the comparisons, fault condition control signals are produced. A fault detection signal is produced when two fault condition control signals indicate the presence of a fault. The fault detection signal is made available for invocation of a failsafe state.

Apparatus and method for detecting a fault condition in a common-mode signal

A low voltage differential swing (LVDS) signal driver having a constant output differential voltage (Vod) over variations in circuit fabrication processes, power supply voltages and operating temperatures (PVT). The minimum and maximum values of the LVDS output signal are monitored and, based upon the difference between them, a signal is provided to the circuit to control the LVDS output signal such that its peak-to-peak value is maintained at a determined value.

Low voltage differential swing (LVDS) signal driver circuit with low PVT sensitivity

A power-up circuit with hysteretic characteristics for regulating the activation of one or more output buffers of an extended logic circuit. The hysteresis of the power-up circuit of the invention permits turn on of a switching transistor of the circuit at one threshold voltage level and maintains the active state of that switching transistor until a second lower threshold voltage level. The hysteresis is achieved by providing two separate and electrically isolated control paths that are connected to the control node of the switching transistor. The first control path includes a plurality of diode devices designed to regulate the power supply level required to turn on the switching transistor. The second control path also includes diode devices but in lesser numbers so that, once the switching transistor is turned on by the first control path, it remains on in spite of fluctuations at the power supply rail.

Hysteretic power-up circuit

An enhanced bipolar-transistor apparatus for protecting electronic devices from electrostatic discharge damage. The apparatus is built around a bipolar transistor coupled between a power rail and the circuit to be protected. The protection is based on the high-current-capacity path through the bipolar transistor which is opened up either by collector-to-emitter punch-through in the bipolar transistor or by the bipolar transistor going into normal conduction upon being turned on by a switch coupled to the base of the bipolar transistor. In the preferred embodiment the switch is a MOS transistor that is designed to undergo source-to-drain breakdown at a fixed threshold voltage, whereupon it activates the bipolar transistor which in turn discharges the overvoltage. In this way the advantages of the high-current-capacity bipolar transistor are obtained without the concern that fabrication vagaries will prevent the bipolar transistor from providing needed protection, such as is the situation where the punch-through phenomenon alone is relied on.

BICMOS electrostatic discharge protection circuit

A circuit for translating logic signals from circuits supplied by one high-potential power rail to circuits supplied by another high-potential power rail in which the potentials of the two high-potential rails are not equal. The translator of the present invention is utilized in the transition from a 3V-supplied circuit to a 5V-supplied circuit, or vice versa, without any static current I.sub.CCt and regardless of the power-up sequencing. The static current is eliminated by isolating the output of the first stage of the translator, which is at the first high-potential power rail level, from all transistors of the second stage that are tied directly to the second high-potential power rail. In the preferred embodiment of the invention the transistors of the second stage that are powered by the second high-potential power rail are PMOS transistors and the isolation is achieved by linking those PMOS transistors to the first stage through a series of controlling NMOS transistors. In that way, the PMOS transistors will be completely turned off when necessary so as to avoid any undesirable conduction paths occurring due to differences in the potentials of the two high-potential power rails.

VCC translator circuit

A BICMOS input buffer circuit (20) incorporates an integral CMOS passgate circuit (P2,N2) between bipolar input (Q1) and output (Q3,Q4,Q5) transistors of the input buffer circuit. Latch enable inputs (LE) receive latch enable signals for operating the input buffer circuit and internal passgate in a transparent mode for passing data signals from the input (V.sub.IN) to the output (V.sub.OUT) and in a blocking mode for blocking data signals. The internal CMOS passgate circuit (P2,N2) is coupled into the input buffer circuit (20) to control nodes of the transistor output pullup (Q4,Q5) and pulldown (Q3) for controlling the conducting states of the respective transistor output pullup and pulldown to implement the blocking and transparent modes. A third passgate transistor (P3) may also be coupled between a control node (m1) of the transistor output pullup (Q4,Q5) and the low potential power rail (GND) for positive turn off of the output pullup. A dynamic power enhancement circuit (DPC) provides transient enhancement for the transition from the blocking mode to transparent mode.

BICMOS input buffer circuit with integral passgate

A circuit to be used with tristate output buffers as a means of diverting from the output pulldown transistor control nodes Miller Current arising while the output buffer is being switched from the low-active state L to the inactive state Z. The circuit complements a DC Miller Killer circuit, relieving the latter from having to deal with this transient, and hence permitting a down-sizing of the DCMK transistor. The net effect is a significantly faster L.fwdarw.Z transition for the tristate buffer and a slightly faster Z.fwdarw.L transition, all accomplished without degrading the DC Miller Killer protection against L.fwdarw.H bus transitions. The key to the present invention is its use of the time interval between the respective, sequential switching of the enable buffer outputs, E and EB following the application of a disable signal to this enable buffer. The present invention includes circuitry which ensures that its Miller Killer transistor is conducting only during the transient associated with the L.fwdarw.Z switching. One embodiment for accomplishing this is to connect the control node of an 'LZ/ACMK' transistor to the high-potential power rail through two control transistors wired in series. Then, by arranging the circuitry so that both control transistors are conducting only when E and EB are both logic-low, a situation which arises only in the midst of a transition of the output buffer into its Z state, the desired AC operation of the present Miller Killer is achieved.

AC Miller-Killer circuit for L.fwdarw.Z transitions

A BICMOS output buffer circuit delivers output signals of high and low potential levels at an output (V.sub.OUT) in response to data signals at an input (V.sub.IN). A CMOS output pulldown driver transistor (Q60) sources base drive current to a relatively large current conducting bipolar primary output pulldown transistor (Q44). A relatively small current conducting CMOS secondary output pulldown transistor (Q60A) is coupled with primary current path in parallel with the primary current path of the bipolar primary output pulldown transistor (Q44) between the output (V.sub.OUT) and low potential power rail (GNDN). The control gate node of CMOS secondary output pulldown transistor (Q60A) is coupled to the control gate node of the CMOS output pulldown driver transistor (Q60) to initiate pulldown of a small sinking current before turn on of the bipolar primary output pulldown transistor (Q44) to reduce the maximum peak output noise (V.sub.OLP). A feed forward circuit capacitance is coupled between the control gate node of the CMOS output pulldown driver transistor (Q60) and base node of the bipolar output pulldown transistor (Q 44). The capacitance value is selected to pass a transient capacitive current sufficient for early turn on of the bipolar output pulldown transistor before the CMOS output pulldown driver transistor delivers sustained conduction current to reduce the maximum 'valley' output noise (V.sub.OLV).

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Hiram, ME, United States of America

Roy L Yarbrough