Praxair Technology, Inc.

Ronald William Shrewsbury

Arthur Edward Holmer

Salim Sateria

This invention is directed a method for producing an ultra-high purity semiconductor gas such as ammonia gas. The method includes the steps of directing an ammonia fluid having a liquid phase moisture content that is less than about 500 parts per million through an evaporation means, to produce purified vapor phase ammonia, and directing the purified vapor phase ammonia through an adsorption means to remove impurities therein and produce ultra-high purity ammonia gas.

Method for purifying semiconductor gases

This invention is directed a method for purifying an impure gas to produce an ultra-high purity gas comprising the steps of a) passing the impure liquefied gas through a first adsorption means to remove impurities from the liquid phase therein to produce a first purified fluid; b) passing the first purified fluid through an evaporation means to remove impurities therein to produce a second purified gas; and c) passing the second purified gas through a second adsorption means to remove impurities from the vapor phase therein to produce the ultra-high purity gas.

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East Amherst, NY, United States of America

Ronald William Shrewsbury