Advanced Micro Devices Corporation

Globalfoundries Inc.

Globalfoundries U.S. Inc.

Alcatel Lucent

Ronald Naumann

Ralf Richter

Silvio Cucchi

Robert Seidel

Carlo Costantini

Volker Grimm

Luigi Ronchetti

Vincenzo Sestito

Silvano Frigerio

Wolfgang Thomas

Riccardo Gemelli

Matthias Zinke

Hans-Jörg Jäkel

Giuseppe Badalucco

Tino Meinhold

Andrey Zakharov

Tobias Barchewitz

The present disclosure relates to semiconductor structures and, more particularly, to a semiconductor structure with a substantially straight contact profile and methods of manufacture. The structure includes a block material comprising an upper oxidized layer at an interface with an insulating material; and an interconnect contact structure with a substantially straight profile through the oxidized layer of the block material.

Semiconductor structure with substantially straight contact profile

When forming strain-inducing dielectric material layers above transistors of different conductivity type, the patterning of at least one strain-inducing dielectric material may be accomplished on the basis of a process sequence in which a negative influence of a fluorine species in an oxygen plasma upon removing the resist mask is avoided or at least significantly suppressed. For example, a substantially oxygen-free plasma process may be applied for removing the resist material.

Enhancing transistor performance by reducing exposure to oxygen plasma in a dual stress liner approach

In a method of forming a semiconductor structure, a substrate comprising at least one contact pad is provided. A passivation layer is formed over the substrate. A mask which does not cover a portion of the passivation layer located over the at least one contact pad is formed over the passivation layer. An etching process adapted to remove a material of the passivation layer is performed and the mask is removed. Then, a second etching process adapted to remove residues of the passivation layer from the contact pad can be performed. The removal of the mask may be performed at a temperature of the substrate in a range from about &#x2212;20&#xb0; C. to about 100&#xb0; C. The second etching process can comprise exposing the substrate to a gaseous etchant comprising hydrogen and fluorine, an amount of hydrogen in the etchant being about equal to an amount of fluorine, or greater. Thus, a formation of oxides and/or fluorides on the at least one contact pad can be avoided.

Method of forming contact pads

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Dresden, Germany

Ronald Naumann