Air Products and Chemicals, Inc.

Versum Materials US, LLC

Ronald Martin Pearlstein

Manchao Xiao

Xinjian Lei

Haripin Chandra

Mark Leonard O'Neill

Bing Han

Daniel P Spence

Richard Ho

Philip Bruce Henderson

Daniel Joseph Tempel

Guido Peter Pez

Steven Gerard Mayorga

Ingrid Kristine Meier

Dorai Ramprasad

Jeffrey Richard Brzozowski

Diwakar Garg

Wayne Thomas McDermott

Heather Regina Bowen

Eugene Joseph Karwacki, Jr

John E Dewhurst

Vladimir Yliy Gershtein

Xiaobo Shi

Madhukar Bhaskara Rao

Agnes Derecskei-Kovacs

Meiliang Wang

Anthony John Lachawiec, Jr

Jianheng Li

Anupama Mallikarjunan

Robert William Ford

Benjamin Lee Hertzler

Thomas R Gaffney

Jean Louise Vincent

Reinaldo Mario Machado

Kerry R Berger

Dingjun Wu

John Giles Langan

Stephen Andrew Motika

John Irven

James Joseph Hart

Hareesh Thridandam

Bing Ji

Alexandre De Almeida Botelho

Dao-Hong Zheng

Sai-Hong Andrew Lo

Steven Arthur Rogers

Lawrence Paul Jarrett

Brian Scott Felker

Rosaleen Patricia Morris-Oskanian

Joseph Raymond Barker

John Timothy Collins

Andrew Joseph Toth

Eugene Joseph Karwacki

Philip E Behm

Thomas W Panunto

Stuart H Dimock

Eugene Jospeh Karwacki, Jr

Matthew R Macdonald

Kerry Renard Berger

John Elton Dewhurst

Jr Eugene Joseph Karwacki

Xiao Manchao

Anthony J Lachawiec

A method for making the EDA that is suitable for use in thin-film semiconductor processing applications, are disclosed. The EDA is purified to remove water and trace metals. Water levels below about 50 ppm by weight are achieved by passing liquid through 3A type molecular sieve in a packed bed. Metallic impurities are removed by distillation and the resulting product is packaged in specially dried and optionally pre-conditioned containers.

High purity ethylenediamine for semiconductor applications

Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of RN(SiRLH), wherein R, R, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

Compositions and processes for depositing carbon-doped silicon-containing films

A method for selectively passivating a surface of a substrate, wherein the surface of the substrate includes at least a first surface comprising silicon nitride and at least a second surface comprising a material other than silicon nitride. The method includes the step of exposing the surface to at least one organoisocyanate wherein the organoisocyanate selectively reacts with the silicon nitride to passivate the first surface thereby leaving the second surface substantially unreacted.

Selective deposition on silicon containing surfaces

Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein:RSi(NRR)(NRR)OR&#x2003;&#x2003;Iwhere Ris selected from hydrogen, a Cto Clinear alkyl group, a Cto Cbranched alkyl group, a Cto Ccyclic alkyl group, a Cto Calkenyl group, a Cto Calkynyl group, a Cto Caromatic hydrocarbon group; R, R, R, and Rare each independently selected from hydrogen, a Cto Cbranched alkyl group, a Cto Ccyclic alkyl group, a Cto Calkenyl group, a Cto Calkynyl group, and a Cto Caromatic hydrocarbon group; Ris selected from a Cto Clinear alkyl group, a Cto Cbranched alkyl group, a Cto Ccyclic alkyl group, a Cto Calkenyl group, a Cto Calkynyl group, and a Cto Caromatic hydrocarbon group.

Bisaminoalkoxysilane compounds and methods for using same to deposit silicon-containing films

Atomic layer deposition (ALD) process formation of silicon oxide with temperature&#x3e;500&#xb0; C. is disclosed.

High temperature atomic layer deposition of silicon oxide thin films

Described herein is an FCVD process for depositing a silicon-containing film from at least one alkoxysilylamine precursor having the following Formulae A and B: wherein Rand Rare independently selected from a linear or branched Cto Calkyl group, a Cto Calkenyl group, a Cto Calkynyl group, a Cto Ccyclic alkyl group, and a Cto Caryl group and wherein R, R, R, R, and Rare independently selected from the group consisting of hydrogen, a linear or branched Cto Calkyl group, a Cto Calkenyl group, a Cto Calkynyl group, a Cto Ccyclic alkyl, a Cto Caryl group, and a linear or branched Cto Calkoxy group.

Alkoxysilylamine compounds and applications thereof

Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of RSi(NRR)Hwherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of RSi(OR)Hwherein x=1, 2, 3; an organoaminosilane having a formula of RN(SiR(NRR)H); an organoaminosilane having a formula of RN(SiRLH)and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NRR)H. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

Described herein are alkoxysilylamine precursors having the following Formulae A and B: wherein Rand Rare independently selected from a linear or branched Cto Calkyl group, a Cto Calkenyl group, a Cto Calkynyl group, a Cto Ccyclic alkyl group, and a Cto Caryl group and wherein R, R, R, R, and Rare independently selected from the group consisting of hydrogen, a linear or branched Cto Calkyl group, a Cto Calkenyl group, a Cto Calkynyl group, a Cto Ccyclic alkyl, a Cto Caryl group, and a linear or branched Cto Calkoxy group. Also described herein are deposition processes using at least one precursor have Formulae A and/or B described herein.

Atomic layer deposition (ALD) process formation of silicon oxide with temperature &#x3e;500&#xb0; C. is disclosed. Silicon precursors used have a formula of:RRSi(NRR)X&#x2003;&#x2003;I.wherein R, R, and Rare each independently selected from hydrogen, a linear or branched Cto Calkyl group, and a Cto Caryl group; Ris selected from, a linear or branched Cto Calkyl group, and a Cto Caryl group, a Cto Calkylsilyl group; wherein Rand Rare linked to form a cyclic ring structure or Rand Rare not linked to form a cyclic ring structure; X is a halide selected from the group consisting of Cl, Br and I; m is 0 to 3; n is 0, 1 or 2; and p is 0, 1 or 2 and m+n+p=3; andRRSi(OR)(OR)X&#x2003;&#x2003;II.wherein Rand Rare each independently selected from hydrogen, a linear or branched Cto Calkyl group, and a Cto Caryl group; Rand Rare each independently selected from a linear or branched Cto Calkyl group, and a Cto Caryl group; wherein Rand Rare linked to form a cyclic ring structure or Rand Rare not linked to form a cyclic ring structure; X is a halide atom selected from the group consisting of Cl, Br and I; m is 0 to 3; n is 0 to 2; q is 0 to 2; p is 0 to 2; and m+n+q+p=3.

Described herein are compositions or formulations for forming a film in a semiconductor deposition process, such as without limitation, a flowable chemical vapor deposition of silicon oxide. Also described herein is a method to improve the surface wetting by incorporating an acetylenic alcohol or diol surfactant such as without limitation 3,5-dimethyl-1-hexyn-3-ol, 2,4,7,9-tetramethyl-5-decyn-4,7-diol, 4-ethyl-1-octyn-3-ol, and 2,5-dimethylhexan-2,5-diol, and other related compounds.

Compositions and methods using same for flowable oxide deposition

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein Ris selected from linear or branched Cto Calkyl group, linear or branched Cto Calkenyl group, linear or branched Cto Calkynyl group, Cto Cdialkylamino group, electron withdrawing group, and Cto Caryl group; Ris selected from hydrogen, linear or branched Cto Calkyl group, linear or branched Cto Calkenyl group, linear or branched Cto Calkynyl group, Cto Cdialkylamino group, Cto Caryl group, linear or branched Cto Cfluorinated alkyl group, electron withdrawing group, and Cto Caryl group; optionally wherein Rand Rare linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Organoaminodisilane precursors and methods for depositing films comprising same

A stable formulation comprising a silicon containing precursor selected from an alkoxysilane, aryloxysilane, or alkylalkoxysilane and a catalyst compound comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane wherein the substitutents within the silicon-containing precursor and catalyst compound are the same are described herein. More specifically, the formulation comprises a silicon-containing precursor comprising an alkoxyalkylsilane or aryloxysilane having a formula of Si(OR)Rand a catalyst comprising haloalkoxyalkylsilane having a formula of XSi(OR)R; or a silicon-containing precursor comprising an alkoxysilane or aryloxysilane having a formula of R(RO)Si&#x2014;R&#x2014;Si(OR)Rand a catalyst comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane having a formula of (RO)R(X)Si&#x2014;R&#x2014;Si(OR)Rwherein at least one or all of the Rand Rsubstituents are the same in both the silicon-containing precursor and catalyst compound are described herein. The formulations can be used in semiconductor deposition process, such as for example, a flowable silicon oxide process.

Catalyst and formulations comprising same for alkoxysilanes hydrolysis reaction in semiconductor process

Alkoxyaminosilane compound having formula I, and processes and compositions for depositing a silicon-containing film, are described herein:(RR)NSiROROR&#x2003;&#x2003;Formula (I)wherein Ris independently selected from a linear or branched Cto Calkyl group; a Cto Calkenyl group; a Cto Calkynyl group; a Cto Ccyclic alkyl group; and a Cto Caryl group; Rand Rare each independently selected from hydrogen; a linear or branched Cto Calkyl group; a Cto Calkenyl group, a Cto Calkynyl group, a Cto Ccyclic alkyl group, and a Cto Caryl group; and Rand Rare each independently selected from a linear or branched Cto Calkyl group; a Cto Calkenyl group; a Cto Calkynyl group; a Cto Ccyclic alkyl group; and a Cto Caryl group.

Alkoxyaminosilane compounds and applications thereof

Growing community of inventors

San Marcos, CA, United States of America

Ronald Martin Pearlstein