Hewlett-packard Development Company, L.p.

Hewlett-packard Company

Ronald L Enck

Zhizhang Chen

Sriram Ramamoorthi

Martha A Truninger

Colin C Davis

Roberto A Pugliese

Daniel A Kearl

Sadiq Bengali

John Liebeskind

Victor Joseph

Victorio Chavarria

Ronnie Yenchik

Ravi Ramaswami

Jennifer Shih

Qin Liu

Paul J Benning

Michael John Regan

Thomas Eugene Novet

Domingo A Figueredo

Gregory T Hindman

Peter Mardilovich

Gregory Scott Herman

Naoto A Kawamura

Eric Lee Nikkel

Michael D Miller

Mehrgan Khavari

Michael B Hager

Shen Buswell

Susanne L Kumpf

J Daniel Smith

Michael David Bic

Michael David Bice

A vacuum device, including a substrate and a support structure having a support perimeter, where the support structure is disposed over the substrate. In addition, the vacuum device also includes a non-evaporable getter layer having an exposed surface area. The non-evaporable getter layer is disposed over the support structure, and extends beyond the support perimeter, in at least one direction, of the support structure forming a vacuum gap between the substrate and the non-evaporable getter layer increasing the exposed surface area.

Vacuum device having non-evaporable getter component with increased exposed surface area

A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.

Ink-jet printhead fabrication

A method for creating an electron lens includes the steps of applying a polymer layer on an emitter surface of an electron emitter and then curing the polymer layer to reduce volatile content.

Integrated focusing emitter

An electrolyte has a core and at least one projection extending from the core. The core is supported on a substrate, and the at least one projection is separated from the substrate.

Method for making thin fuel cell electrolyte

Vacuum device having a getter

The present invention includes as one embodiment a method for fabricating a portion of an ink-jet printhead made of a silicon substrate, the method including selectively etching active region contact vias of a field effect transistor that has a conducting channel that is insulated from a gate terminal by a layer of oxide along with separate substrate contact vias using a single mask and forming the substrate contact vias simultaneously with the active region contact vias during the selective etching.

Fluid ejection device

A method of manufacturing a getter structure, including forming a support structure having a support perimeter, where the support structure is disposed over a substrate. In addition, the method includes forming a non-evaporable getter layer having an exposed surface area, where the non-evaporable getter layer is disposed over the support structure, and includes forming a vacuum gap between the substrate and the non-evaporable getter layer. The non-evaporable getter layer extends beyond the support perimeter of the support structure increasing the exposed surface area.

Method of making a getter structure

The described embodiments relate to methods and systems for forming slots in a substrate. In one exemplary embodiment, a slot is formed in a substrate that has first and second opposing surfaces. A first trench is dry etched through the first surface of the substrate. A second trench is created through the second surface of the substrate effective to form, in combination with the first trench, a slot. At least a portion of the slot passes entirely through the substrate, and the maximum width of the slot is less than or equal to about 50 of the thickness of the substrate.

Methods and systems for forming slots in a substrate

An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Silicon-based dielectric tunneling emitter

A process for fabricating a droplet plate for the printhead of an ink-jet printer, which process provides design flexibility, precise dimension control, as well as material robustness. Also provided is a droplet plate fabricated in accord with the process.

Droplet plate architecture

Droplet plate architecture in ink-jet printheads

Growing community of inventors

Corvallis, OR, United States of America

Ronald L Enck