Rensselaer Polytechnic Institute

Mia-com, Inc.

Ronald J Gutmann

Shyam P Murarka

David J Duquette

David Fryklund

Joseph M Steigerwald

Nitin Jain

A system for performing chemical mechanical planarization for a semiconductor wafer includes a chemical mechanical polishing system including a chemical mechanical polishing slurry. The system also includes a device for measuring the electrochemical potential of the slurry during processing which is electrically connected to the slurry, and a device for detecting the end point of the process, based upon the electrochemical potential of the slurry, which is responsive to the electrochemical potential measuring device. Accurate in situ control of a chemical mechanical polishing process is thereby provided.

Systems for performing chemical mechanical planarization and process for

A gate biasing circuit including a Schottky barrier diode in series with an ion implanted resistor for use with a baseband MMIC control components such as an MESFET. The diode gate biasing scheme improves the low frequency distortion characteristics of GaAs MESFET control components significantly, allowing microwave power handling and distortion characteristics to be maintained below 100 Hz.

Control component for a three-electrode device

Growing community of inventors

Troy, NY, United States of America

Ronald J Gutmann