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International Business Machines Corporation

Siemens Aktiengesellschaft

Infineon Technologies Ag

Ronald Hoyer

Susan L Cohen

Colleen M Snavely

Audrey Dupont

Mohamad Jahanbani

Stefan Ruemmelin

Russ Arndt

Systems and methods include introducing a semiconductor wafer into a process chamber. An etching chemistry is injected into the process chamber to etch a patterned layer and to release free-standing nanostructures on the semiconductor wafer. The etching chemistry includes a supercritical or liquid carbon dioxide fluid and an etching solution. The semiconductor wafer is rinsed by flooding a supercritical or liquid carbon dioxide fluid into the process chamber. The semiconductor wafer is dried by venting out supercritical or liquid carbon dioxide fluid from the process chamber.

Method and system for fabricating free-standing nanostructures

A device for performing surface treatment on semiconductor wafers has a cassette ( ) for accommodating a plurality of wafers ( ) in its interior ( ); the wafers ( ) are aligned in a first row. The wafer surfaces ( ) are essentially in parallel with each other. The cassette ( ) has a side-wall ( ) which can be arranged essentially perpendicular with respect to the wafer surfaces ( ); the side-wall ( ) has openings ( ) on its face ( ) which is directed to the wafers ( ), the openings ( &prime;) are aligned in second rows, the second rows are essentially parallel to the first row; the openings ( &prime;) are connected to respective supply channels ( ) for transporting a surface treatment medium which is fed to one ( &prime;) of these supply channels via a feeding point (FP). The cross-section of the openings ( &prime;) is variable.

Device for performing surface treatment on semiconductor wafers

A method for forming silica stain on a substrate to facilitate monitoring of the silica stain during integrated circuit manufacture. The method includes providing a silica stain test structure which has a silicon substrate, a hydrophilic silicon dioxide containing layer disposed above the silicon substrate, and a plurality of cavities formed in the silicon substrate through the silicon dioxide containing layer. The cavities have hydrophobic sidewalls. The method also includes exposing the silica stain test structure to deionized water, and drying the silica stain test structure to form the silica stain on the silicon dioxide containing layer.

Method for making silica strain test structures

Growing community of inventors

Dresden, Germany

Ronald Hoyer