Gtat Corporation

Applied Materials, Inc.

Axcelis Technologies, Inc.

Twin Creeks Technologies, Inc.

Ronald Horner

Theodore H Smick

Geoffrey Ryding

Paul Eide

Takao Sakase

Joseph Daniel Gillespie

William Park, Jr

Drew Arnold

Marvin Farley

Hilton Frank Glavish

William H Park

Edward Eisner

Brian S Freer

John Gordon

Kan Ota

Keith D Relleen

Robert J Mitchell

Donald N Polner

Mark Lambert

Donovan Beckel

Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60&#xb0;. A collimated scanned beam of ions, for example H, is directed along a final beam path which is at an angle of at least 45&#xb0; to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.

Ion implant apparatus and a method of implanting ions

A d.c. charged particle accelerator comprises accelerator electrodes separated by insulating spacers defining acceleration gaps between adjacent pairs of electrodes. Individually regulated gap voltages are applied across each adjacent pair of accelerator electrodes. In embodiments, the individually regulated gap voltages are generated by electrically isolated alternators mounted on a common rotor shaft driven by an electric motor. Alternating power outputs from the alternators provide inputs to individual regulated d.c. power supplies to generate the gap voltages. The power supplies are electrically isolated and have outputs connected in series across successive pairs of accelerator electrodes. The described embodiment enables an ion beam to be accelerated to high energies and high beam currents, with good accelerator stability.

D. c. Charged particle accelerator, a method of accelerating charged particles using d. c. voltages and a high voltage power supply apparatus for use therewith

An apparatus and a method of ion implantation using a rotary scan assembly having an axis of rotation and a periphery. A plurality of substrate holders is distributed about the periphery, and the substrate holders are arranged to hold respective planar substrates. Each planar substrate has a respective geometric center on the periphery. A beam line assembly provides a beam of ions for implantation in the planar substrates on the holders. The beam line assembly is arranged to direct said beam along a final beam path.

Ion implant apparatus and method of ion implantation

Multiple control electrodes are provided asymmetrically within the plasma chamber of an ion source at respective positions along the length of the plasma chamber. Biasing the control electrodes selectively can selectively enhance the ion extraction current at adjacent positions along the length of the extraction slit. A method of generating an ion beam is disclosed in which the strengths of the transverse electric fields at different locations along the length of the plasma chamber are controlled to modify the ion beam linear current density profile along the length of the slit. The method is used for controlling the uniformity of a ribbon beam.

Ion source and a method of generating an ion beam using an ion source

An ion implantation system configured to produce an ion beam is provided, wherein an end station has a robotic architecture having at least four degrees of freedom. An end effector operatively coupled to the robotic architecture selectively grips and translates a workpiece through the ion beam. The robotic architecture has a plurality of motors operatively coupled to the end station, each having a rotational shaft. At least a portion of each rotational shaft generally resides within the end station, and each of the plurality of motors has a linkage assembly respectively associated therewith, wherein each linkage assembly respectively has a crank arm and a strut. The crank arm of each linkage assembly is fixedly coupled to the respective rotational shaft, and the strut of each linkage assembly is pivotally coupled to the respective crank arm at a first joint, and pivotally coupled to the end effector at a second joint.

Low-inertia multi-axis multi-directional mechanically scanned ion implantation system

An ion beam angle calibration and emittance measurement system, comprising a plate comprising an elongated slit therein, wherein the elongated slit positioned at a rotation center of the plate and configured to allow a first beam portion to pass therethrough. A beam current detector located downstream of the plate, wherein the beam current detector comprises a slit therein configured to permit a second beam portion of the first beam portion to pass therethrough, wherein the beam current detector is configured to measure a first beam current associated with the first beam portion. A beam angle detector is located downstream of the beam current detector and configured to detect a second beam current associated with the second beam portion. The plate, the current beam detector and the beam angle detector are configured to collectively rotate about the rotation center of the plate.

Ion beam angle calibration and emittance measurement system for ribbon beams

This invention relates to an apparatus for scanning substrates through an ion beam in the process chamber of an ion implanter. The apparatus comprises a substrate carriage and reaction mass carriage movably mounted to a fixed base. The substrate carriage is adapted to support a substrate holder. Movement of the substrate carriage results in movement of the substrate holder, and substrate mounted therein, through the ion beam. The reaction mass carriage moves in the opposite direction to the substrate carriage to counter any reaction forces exerted on the fixed base as a result of acceleration of the substrate carriage.

Substrate scanner apparatus

An ion implanter incorporates an r.f. accelerator assembly to provide ions for implant at high energies. The accelerator assembly includes electrodes mounted in the vacuum chamber so as to be movable between an operational position for generating and accelerating electric field and a non operational position within the vacuum chamber displaced clear of the beam path. An Actuator moves the electrode between the operational and non operation positions. For energy implanting, the electrodes are in the operational position and for low energy implants the actuator moves the electrodes to the non operational position clear of the beam path.

Ion implanter and a method of implanting ions

Growing community of inventors

Auburndale, MA, United States of America

Ronald Horner