Asml Netherlands B.v.

Ronald Henricus Johannes Otten

Richard Johannes Franciscus Van Haren

Leon Paul Van Dijk

Ilya Malakhovsky

Xing Lan Liu

Reiner Maria Jungblut

Amandev Singh

Masashi Ishibashi

Hakki Ergun Cekli

Cedric Marc Affentauschegg

Mahdi Sadeghinia

Subodh Singh

A method and control system for determining stress in a substrate. The method includes determining a measured position difference between a measured position of at least one first feature and a measured position of at least one second feature which have been applied on a substrate, and determining local stress in the substrate from the measured position difference.

Methods of determining stress in a substrate, control system for controlling a lithographic process, lithographic apparatus and computer program product

Methods and apparatuses for determining in-plane distortion (IPD) across a substrate having a plurality of patterned regions. A method includes obtaining intra-region data indicative of a local stress distribution across one of the plurality of patterned regions; determining, based on the intra-region data, inter-region data indicative of a global stress distribution across the substrate; and determining, based on the inter-region data, the IPD across the substrate.

Metrology apparatus

Methods and associated apparatus for reconstructing a free-form geometry of a substrate, the method including: positioning the substrate on a substrate holder configured to retain the substrate under a retaining force that deforms the substrate from its free-form geometry; measuring a height map of the deformed substrate; and reconstructing the free-form geometry of the deformed substrate based on an expected deformation of the substrate by the retaining force and the measured height map.

Methods and apparatus for use in a device manufacturing method

A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.

Lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product

Growing community of inventors

Rosmalen, Netherlands

Ronald Henricus Johannes Otten