Samsung Electronics Co., Ltd.

Roman Chalykh

Taehoon Lee

Byunggook Kim

SeongSue Kim

Jaehyuck Choi

Yongseok Jung

Hwanseok Seo

Sungwon Kwon

Munja Kim

Hwanchul Jeon

A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.

Phase-shift mask for extreme ultraviolet lithography

A pellicle for lithography processes, including extreme ultraviolet (EUV) lithography may mitigate thermal accumulation in a membrane of the pellicle. The pellicle includes a membrane and at least one thermal buffer layer on at least one surface of the membrane. An emissivity of the thermal buffer layer may be greater than an emissivity of the membrane. A carbon content of the thermal buffer layer may be greater than a carbon content of the membrane. Multiple thermal buffer layers may be on separate surfaces of the membrane, and the thermal buffer layers may have different properties. A capping layer may be on at least one thermal buffer layer, and the capping layer may include a hydrogen resistant material. A thermal buffer layer may extend over some or all of a surface of the membrane. A thermal buffer layer may be between at least two membranes.

Pellicle for preventing thermal accumulation and extreme ultra-violet lithography apparatus having the same

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Suwon-si, South Korea

Roman Chalykh