Applied Materials, Inc.

Roger M Johnson

Brian T West

Michael Santiago Cox

Colin John Dickinson

Rongping Wang

Simon Nicholas Binns

Jeonghoon Oh

Ronald Vern Schauer

Yan Rozenzon

Jamie Leighton

Van H Nguyen

Daniel O Clark

Robbert M Vermeulen

Jay J Jung

Youssef A Loldj

Mark Roger Covington

Phil Chandler

Soundarrajan Jembulingam

Miroslav Gelo

Vivek Vinit

Dinkesh Somanna

James L Smith

Dustin W Ho

Embodiments of a system and method for polishing substrates are provided. In one embodiment, a polishing system is provided that includes a polishing module having a platen, and a platen temperature control system. The platen temperature control system includes a PID controller, a fluid controller, and a heat exchanger. The flow controller is configured to control an amount of fluid provided from the heat exchanger to a channels of the platen in response to instructions provided by the PID controller.

Chemical mechanical polishing system with platen temperature control

An apparatus and method for sequential application of cleaning fluids for improved maintenance of chemical mechanical polishing (CMP) systems is disclosed. A method includes transferring a first substrate to a first polishing station of a plurality of polishing stations, polishing the first substrate at the first polishing station, transferring the first substrate to a second polishing station, and transferring a second substrate to the first polishing station. The method includes cleaning a first surface of a plurality of surfaces of the polishing system by dispensing a first cleaning fluid from a first one or more nozzles of a plurality of nozzles to direct the first cleaning fluid onto the first surface and dispensing a second cleaning fluid from the first one or more nozzles to direct the second cleaning fluid onto the first surface, where the second cleaning fluid is different from the first cleaning fluid.

Sequential application of cleaning fluids for improved maintenance of chemical mechanical polishing systems

Implementations described herein provide a pedestal lift assembly for a plasma processing chamber and a method for using the same. The pedestal lift assembly has a platen configured to couple a shaft of a pedestal disposed in the plasma processing chamber. An absolute linear encoder is coupled to a fixed frame wherein the absolute linear encoder is configured to detect incremental movement of the platen. A lift rod is attached to the platen. A motor rotor encoder brake module (MRBEM) is coupled to the fixed frame and moveably coupled to the lift rod, the motor encoder brake module configured to move the lift rod in a first direction and a second direction, wherein the movement of the lift rod results in the platen traveling vertically relative to the fixed frame.

Pedestal lift for semiconductor processing chambers

Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes an exhaust cooling apparatus located downstream of a plasma source. The exhaust cooling apparatus includes at least one cooling plate a device for introducing turbulence to the exhaust flowing within the exhaust cooling apparatus. The device may be a plurality of fins, a cylinder with a curved top portion, or a diffuser with angled blades. The turbulent flow of the exhaust within the exhaust cooling apparatus causes particles to drop out of the exhaust, minimizing particles forming in equipment downstream of the exhaust cooling apparatus.

Apparatus for exhaust cooling

A process chamber includes a chamber body having a chamber lid assembly disposed thereon, one or more monitoring devices coupled to the chamber lid assembly, and one or more antennas disposed adjacent to the chamber lid assembly that are in communication with the one or more monitoring devices.

Smart chamber and smart chamber components

Embodiments disclosed herein include a method for abating compounds produced in semiconductor processes. The method includes energizing an abating agent, forming a composition by reacting the energized abating agent with gases exiting a vacuum processing chamber, and flowing the composition through a plurality of holes formed in a cooling plate. By cooling the composition with the cooling plate, damages on the downstream pump are avoided.

Method of cooling a composition using a hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system

Embodiments of the present invention generally provide a magnetron that is encapsulated by a material that is tolerant of heat and water. In one embodiment, the entire magnetron is encapsulated. In another embodiment, the magnetron includes magnetic pole pieces, and the magnetic pole pieces are not covered by the encapsulating material.

Encapsulated magnetron

Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abatement system having a plasma source

Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Capacitively coupled plasma source for abating compounds produced in semiconductor processes

Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system

Hall effect enhanced capacitively coupled plasma source

A method for operating one or more electronic device manufacturing systems is provided, including the steps 1) performing a series of electronic device manufacturing process steps with a process tool, wherein the process tool produces effluent as a byproduct of performing the series of process steps; 2) abating the effluent with an abatement tool; 3) supplying an abatement resource to the abatement tool from a first abatement resource supply; 4) changing an abatement resource supply from the first abatement resource supply to a second abatement resource supply, wherein changing the abatement resource supply comprises: i) interrupting a flow of the abatement resource from the first abatement resource supply; and ii) beginning a flow of the abatement resource from the second abatement resource supply; and 5) continuing to perform the series of process steps with the process tool, while changing, and after changing, the abatement resource supply.

Growing community of inventors

Livermore, CA, United States of America

Roger M Johnson