Tokyo Electron Limited

Rodney Lee Robison

Jozef Brcka

Ronald W Nasman

Anton J deVillers

Gerrit J Leusink

Lior Huli

Tugrul Yasar

James Grootegoed

Bruce David Gittleman

Jacques Faguet

Daniel J Fulford

Joshua Hooge

Hoyoung Kang

Takashi Horiuchi

Norman A Jacobson, Jr

David Travis

Frank Cerio

Robert Daniel Clark

Mirko Vukovic

Frank M Cerio, Jr

Douglas M Trickett

Toshiaki Fujisato

Glyn J Reynolds

David Hetzer

Michael James Grapperhaus

Marian Zielinski

Norman Jacobson

Daniel Deyo

An apparatus for depositing films on a backside of a substrate includes a processing chamber and a substrate support having an annular support surface. A first gas distribution unit includes a plurality of gas delivery openings arranged along the backside surface of the substrate and configured to direct plasma deposition gas to the backside surface. A second gas distribution unit is configured to flow a second gas into the processing chamber such that the front side surface of the substrate is exposed to the second gas. A controller is configured to control flow of the plasma deposition gas from the first gas distribution unit, flow of the second gas from the second gas distribution unit a vacuum system. The controller maintains a gas pressure differential between the front side surface and the backside surface of the substrate sufficient to prevent passage of the deposition gas from the backside surface.

System for backside deposition of a substrate

Techniques herein include a process chamber for depositing thin films to backside surfaces of wafers to reduce wafer bowing and distortion. A substrate support provides an annular perimeter seal around the bottom and/or side of the wafer which allows the majority of the substrate backside to be exposed to a process environment. A supported wafer separates the chamber into lower and upper chambers that provide different process environments. The lower section of the processing chamber includes deposition hardware configured to apply and remove thin films. The upper section can remain a chemically inert environment, protecting the existing features on the top surface of the wafer. Multiple exhausts and differential pressures are used to prevent deposition gasses from accessing the working surface of a wafer.

A method and a system are described for mixing liquid chemicals at dynamically changing or static ratios during a given dispense, with extremely high uniformity and repeatability. A mixer includes multiple fluid supply lines including elongate bladders defining a linear flow path and being configured to laterally expand to collect a process fluid and laterally contract to deliver a selected volume of the process fluid to the mixer.

Point-of-use dynamic concentration delivery system with high flow and high uniformity

A processing system is disclosed, having a process chamber that houses a substrate for exposure of a surface of the substrate to a travelling electromagnetic (EM) wave. The processing system also includes an EM wave transmission antenna configured to launch the travelling EM wave into the process chamber for the travelling EM wave to propagate in a direction substantially parallel to the surface of the substrate. The processing system also includes a power coupling system configured to supply EM energy into the EM wave transmission antenna to generate the travelling EM wave at a prescribed output power and in a prescribed EM wave mode during treatment of the substrate. The processing system also includes an EM wave receiving antenna configured to absorb the travelling EM wave after propagation through the process chamber.

Processing system for electromagnetic wave treatment of a substrate at microwave frequencies

Techniques herein include a bladder-based dispense system using an elongate bladder configured to selectively expand and contract to assist with dispense actions. This dispense system compensates for filter-lag, which often accompanies fluid filtering for microfabrication. This dispense system also provides a high-purity and high precision dispense unit. A process fluid filter is located downstream from a process fluid source as well as a system valve. Downstream from the process fluid filter there are no valves. Dispense actions can be initiated and stop while the system valve is open by using the elongate bladder. The elongate bladder can be expanded to stop or pause a dispense action, and then be contracted to assist with a dispense action.

High-purity dispense system

Techniques herein include a bladder-based dispense system using an elongate bladder configured to selectively expand and contract to assist with dispense actions. This dispense system compensates for filter-lag, which often accompanies fluid filtering for microfabrication. This dispense system also provides a high-purity and high precision dispense unit. A meniscus sensor monitors a position of a meniscus of process fluid at a nozzle. The elongate bladder unit is used to maintain a position of the meniscus at a particular location by selectively expanding or contracting the bladder, thereby moving or holding a meniscus position. Expansion of the elongate bladder is also used for a suck-back action after completing a dispense action.

High-precision dispense system with meniscus control

An electrostatic chuck configured for high temperature reduced-pressure processing is described. The electrostatic chuck comprises a chuck body having an electrostatic clamp electrode and an optional heating element, and a heat sink body having a heat transfer surface spaced in close relationship with an inner surface of the chuck body, wherein the heat sink body is configured to remove heat from the chuck body due to the close proximity of the inner surface and the heat transfer surface. The electrostatic chuck further comprises a table assembly configured to support the chuck body and the heat sink body, and an expansion joint disposed between the chuck body and the table assembly, and configured to sealably join the chuck body to the table assembly while accommodating for differential thermal expansion of the chuck body and the table assembly.

High temperature electrostatic chuck and method of using

An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source includes a segmented configuration having high and low radiation segments and produces a generally ring-shaped array of alternating high and low energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle. The antenna has concentrated conductor segments through which current flows in lengths of closely-spaced windings of a single conductor to produce high magnetic fields that couple through the high-transparency shield segments into the chamber, and alternating distributed conductor segments through which current flows in lengths of more widely-spaced windings of the conductor to produce weaker magnetic fields aligned with more opaque shield sections that couple less energy to the plasma.

Plasma processing system with locally-efficient inductive plasma coupling

An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang within a vacuum chamber. The iPVD system is operated at low target power and high pressure &#x3e;50 mT to sputter material from the target. RF energy is coupled into the chamber to form a high density plasma. A small RF bias (less than a few volts) can be applied to aid in enhancing the coverage, especially at the bottom.

Ionized physical vapor deposition (iPVD) process

A low inductance RF antenna is provided for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The antenna has a planar segmented configuration having high and low efficiency segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. The antenna has closely spaced conductor segments through which current flows in one or more small cross-section conductors to produce high magnetic fields while alternating widely spaced conductor segments produce low strength magnetic fields.

Calibration wafers and methods for calibrating a plasma process performed in a plasma processing apparatus, such as an ionized physical vapor deposition apparatus. The calibration wafer includes one or more selective-redeposition structures for calibrating a plasma process. The selective-redeposition structures receive a controllable and/or measurable amount of redeposited material during the plasma process.

Selective-redeposition structures for calibrating a plasma process

Embodiments of the invention describe electrical contacts for integrated circuits and methods of forming using gas cluster ion beam (GCIB) processing. The electrical contacts contain a fused metal-containing layer formed by exposing a patterned structure to a gas cluster ion beam containing a transition metal precursor or a rare earth metal precursor.

Electrical contacts for integrated circuits and methods of forming using gas cluster ion beam processing

Calibration wafers and methods for calibrating a plasma process performed in a plasma processing apparatus, such as an ionized physical vapor deposition apparatus. The calibration wafer includes one or more selective-redeposition sources that may be used for calibrating a plasma process. The selective-redeposition sources are constructed to promote the redeposition of a controllable and/or measurable amount of material during the plasma process.

Selective-redeposition sources for calibrating a plasma process

An iPVD apparatus () is programmed to deposit material () onto semiconductor substrates () by cycling between deposition and etch modes within a vacuum chamber (). Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 0-10 Gauss. Static magnetic fields during deposition modes may be more than 150 Gauss, in the range of 0-50 Gauss, or preferably 20-30 Gauss, and may be the same as during etch modes or switched between a higher level during deposition modes and a lower level, including zero, during etch modes. Such switching may be by switching electromagnet current or by moving permanent magnets, by translation or rotation. Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 1-10 Gauss. The modes may operate at different power and pressure parameters. Pressure of more than 50 mTorr are preferred for deposition in a thermalized plasma while pressure of less than a few mTorr is preferred for etching.

Ionized PVD with sequential deposition and etching

Enhanced reliability and performance stability of a deposition baffle is provided in ionized physical vapor deposition (iPVD) processing tool in which a high density plasma is coupled into a chamber from an external antenna through a dielectric window. A deposition baffle with slots protects the window. The deposition baffle has slots through it. The width of the slots at the window side of the baffle is different from the width of the slots at the plasma side of the baffle. Preferably, the ratio of width of the slots at the window side is preferably less than the width at the plasma side. The slots have sidewalls at the plasma side that are arc spray coated. The ratio of the baffle thickness to slot width, or the slot's aspect ratio, is less than 8:1, and preferably less than 6:1. The deposition baffle is spaced less than 1 mm from the window, and preferably less than 0.5 mm from the window.

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Mesa, AZ, United States of America

Rodney Lee Robison