Nova Measuring Instruments Ltd.

Kla-Tencor Technologies Corporation

Kla Tencor Corporation

Revera, Incorporated

Therma-Wave, Inc.

Tokyo Electron Limited

Kla-Technologies Corporation

Schueler, Bruno W.

Fanton, Jeffrey Thomas

Reed, David a.

Smedt, Rodney

Rodney C Smedt

David Allen Reed

Bruno W Schueler

Jeffrey Thomas Fanton

Bruce H Newcome

Chris Bevis

Mehrdad Nikoonahad

Heath A Pois

Christopher F Bevis

David W Shortt

Daniel Ivanov Kavaldjiev

Hans J Hansen

Paul J Sullivan

John Fielden

Ady Levy

Kyle A Brown

Dan Wack

George J Kren

Gary Bultman

Abdurrahman Sezginer

Guoheng Zhao

Adam Eales Norton

Fred E Stanke

Kenneth P Gross

Ibrahim Abdul-Halim

Ibrahim Abdulhalim

Hsu-Ting Huang

Geroge Kren

Bruno Shueler

A system and method for measuring a sample by X-ray reflectance scatterometry. The method may include impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles; and collecting at least a portion of the scattered X-ray beam.

System and method for measuring a sample by x-ray reflectance scatterometry

Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry

Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry

Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.

Methods and systems for measuring periodic structures using multi-angle x-ray reflectance scatterometry (XRS)

Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS)

Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass, spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

Methods and systems for fabricating platelets of a monochromator for X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a method of fabricating a platelet of a monochromator for X-ray photoelectron spectroscopy involves placing a crystal on a stage of an X-ray measuring apparatus, the crystal having a top surface. The method also involves measuring, by X-ray reflection, an orientation of a crystal plane of the crystal, the crystal plane beneath the top surface of the crystal and having a primary axis. The method also involves measuring a surface angle of the top surface of the crystal by measuring a light beam reflected from the top surface of the crystal.

Methods and systems for fabricating platelets of a monochromator for X-ray photoelectron spectroscopy

Systems and methods for characterizing films by X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a system for characterizing a film may include an X-ray source for generating an X-ray beam having an energy below the k-edge of silicon. A sample holder may be included for positioning a sample in a pathway of the X-ray beam. A first detector may be included for collecting an XPS signal generated by bombarding the sample with the X-ray beam. A second detector may be included for collecting an X-ray fluorescence (XRF) signal generated by bombarding the sample with the X-ray beam. Monitoring/estimation of the primary X-ray flux at the analysis site may be provided by X-ray flux detectors near and at the analysis site. Both XRF and XPS signals may be normalized to the (estimated) primary X-ray flux to enable film thickness or dose measurement without the need to employ signal intensity ratios.

System and method for characterizing a film by X-ray photoelectron and low-energy X-ray fluorescence spectroscopy

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Los Gatos, CA, United States of America

Rodney C Smedt