Infineon Technologies Ag

Advanced Mask Technology Center Gmbh + Co. Kg

Roderick Koehle

Christoph Noelscher

Martin Verbeek

Dominique Savignac

Henning Haffner

Alois Gutmann

Chandrasekhar Sarma

Sajan Marokkey

Rainer Pforr

Molela Moukara

Reinhard Pufall

Wolfgang Dettmann

Nicolo Morgana

Carla Byloos

Haiko Rolff

Ralf Neubauer

Bernd Kuechler

Multi-beam lithography systems and methods of manufacturing semiconductor devices using the same are disclosed. For example, the method utilizes non-coincidence of boundaries of electrical fields emanating from chrome on glass or phase shifted mask features distributed over two masks for the optimization of lithographic process windows, side lobe suppression, or pattern orientation dependent process window optimization employing one mask with polarization rotating film on the backside.

Lithography systems and methods of manufacturing using thereof

A lithographic mask comprises a first layer including grooves, a second layer including regions, sections and a groove-like structure that encloses the sections. The first and second layers are formed so as to reduce electrical potential differences within the second layer. A method of forming a lithographic mask includes forming first and second layers to dispose the second layer over the first layer, patterning the second layer to comprise sections, a region, and a groove-like structure enclosing the sections, and forming grooves in the first layer at portions not covered by the second layer. The first and second layers are formed to reduce potential differences within the second layers during the step of forming the grooves in the first layer.

Lithographic mask and method of forming a lithographic mask

The invention, which relates to a method for checking periodic structures on lithography masks, in which an image of the structure of the lithography mask is generated by an imaging optic of a microscope, provides a method for inspecting structures on lithography masks which is used to represent deviations in the periodic structure of a lithography mask, a better demarcation of the periodic structure from a deviation being achieved. The parameters of wavelength &#x3bb;, the numerical aperture NA and the coherence of the illumination &#x3c3; of the imaging optic of the microscope are chosen such that the inequality describing the resolution limit for a periodic structure having the period P is fulfilled, and in that the image of the structure that is generated in this way is evaluated for deviations in the periodic structure.

Method for checking periodic structures on lithography masks

The invention relates to a method for optimizing a mask layout pattern comprising at least one structural feature. First a desired layout pattern is provided. Based on the desired layout pattern, an optimized reference diffraction coefficient is provided. After selecting an initial mask geometry having polygon-shaped structures, initial diffraction coefficients are calculated. A difference based on the reference diffraction coefficient and initial diffraction coefficients is used to optimize the initial geometry in order to provide a mask layout pattern.

Method for optimizing a photolithographic mask

The invention relates to a method for inspection of periodic structures on lithography masks using a microscope with adjustable illumination and an operating element for movement of a mechanical stage with the lithography mask attached to it in order to record images of the lithography mask at a computer-controlled location on the lithography mask. The position, the size and the pitch specification of the lithography mask are stored.

Method for inspection of periodic grating structures on lithography masks

In the method, which is to be carried out on a computer system, firstly design data of a semiconductor substrate are read in and, on the basis thereof, a mask image is generated in the form of a data structure with contact holes and with auxiliary structures on the computer system. Afterwards, contact hole biases are determined by means of an optical proximity correction method and the relevant contact holes are corrected on the basis of these contact hole biases. By means of subsequent imaging simulation of the mask image on the semiconductor substrate, undesired imaging auxiliary structures and contact holes deviating from specified tolerances on the semiconductor substrate are detected and corrected. During the imaging simulation of the mask image, a mask bias is employed in order to compensate for three-dimensional mask effects. A real mask can be produced on the basis of the mask image thus determined.

Method for determining the construction of a mask for the micropatterning of semiconductor substrates by means of photolithography

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Ottobrunn, Germany

Roderick Koehle