General Electric Company

Robert W Stoll

Ronald H Wilson

Michael R MacLaury

Manjin J Kim

Bruce F Griffing

Herbert R Philipp

Arlene G Williams

Michael A Calacone

Molybdenum gate electrode material is provided with an upper layer of molybdenum nitride which acts to prevent deposition of source and drain contact metal by selective chemical vapor deposition (CVD). The nitride layer also provides an improved mask for ion implantation process steps. This results in an FET structure exhibiting a high degree of planarity which is desirable for multilevel device fabrication.

Active area planarization with self-aligned contacts

A method and heating apparatus are provided for selectively depositing metal films, such as tungsten, on the metal and semi-conductor surfaces of a silicon wafer by chemical vapor deposition. The method and heating apparatus serve to isolate the depositing surface of silicon wafers from both infrared radiation and the nucleating species which are vaporized by hot surfaces within the reaction chamber by means of a barrier which reflects or absorbs infrared radiation and condenses vaporized nucleating species before a nucleate metal deposition sites on metal or semiconductor surfaces.

Method for selective deposition of tungsten by chemical vapor deposition

An apparatus is provided for selectively depositing metal films on metal and semiconductive surfaces of a substrate wherein the depositing surface of the substrate is isolated from undesired impinging radiation, such as infrared radiation.

Selective chemical vapor deposition apparatus

A method for treating fumed silica in a continuous manner is provided by effecting contact between the fumed silica, while in a fluidized state, with a methyl substituted chlorosilane, hydrochloric acid and a surfactant.

Method for treating fumed silica

A method is provided for selectively depositing tungsten metal at thicknesses over 1000 angstroms or more on silicon and other conductor and semiconductor surfaces, wherein a substrate containing such surfaces is exposed to a chlorine or bromine containing solution to prevent deposition of tungsten on the insulator surfaces.

Growing community of inventors

Schenectady, NY, United States of America

Robert W Stoll