International Business Machines Corporation

Other

Robert Neal Lang

Marie Angelopoulos

Wayne Martin Moreau

Wu-Song S Huang

Ranee W Kwong

Arpan Pravin Mahorowala

David Robert Medeiros

Harbans S Sachdev

Krishna Gandhi Sachdev

Katherina E Babich

Michael Straight Hibbs

Ari Aviram

S Jay Chey

Karen Elizabeth Petrillo

Kenneth Christopher Racette

Qinghuang Lin

John Patrick Hummel

Wenjie Li

Ratnam Sooriyakumaran

Robert Lavin Wood

Gregory Breyta

Charles Hampton Perry

Willard E Conley

C Richard Guarnieri

Leo L Linehan

Christopher F Lyons

Premlatha J Jagannathan

Joel R Whitaker

Steve S Miura

Sundar Mangalore Kamath

Anton Nendaic

Dai Junyan

Richard J Kvitek

A barrier layer for fabricating at least one of a device and a mask includes a polymeric photoacid generator formed between a substrate and a resist layer. The barrier layer may be used, for example, in forming a resist image, and forming a patterned material feature on a substrate.

Ultrathin polymeric photoacid generator layer and method of fabricating at least one of a device and a mask by using said layer

The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.

High sensitivity resist compositions for electron-based lithography

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.

Attenuated embedded phase shift photomask blanks

Radiation sensitive silicon-containing negative resists and use thereof

A chemically amplified (CA) photoresist system wherein a terpolymer containing ketal/phenolic/silicon based sidechains is provided. Among other things, the terpolymers provide for improved bake technologies. In another aspect a process for lithographic treatment of a substrate by means of ketal/phenolic/silicon based compositions and corresponding processes for the production of an object, particularly an electronic component are provided.

Etch improved resist systems containing acrylate (or methacrylate) silane monomers

The invention provides improved resist compositions and lithographic methods using the resist compositions of the invention. The resist compositions of the invention are acid-catalyzed resists which are characterized by the presence of an SiO-containing polymer. The invention also encompasses methods of forming patterned material layers (especially conductive, semiconductive, or magnetic material structures) using the combination of the SiO-containing resist and a halogen compound-containing pattern transfer etchant where the halogen is Cl, Br or I.

Mask-making using resist having SIO bond-containing polymer

A multilevel high density interconnect structure of a semiconductor device or package including a substrate having at least one conductive feature therein, a film of a polyimide composition on the substrate and selected from the group consisting of a cured product of a polyamic acid and a cured product of a polyamic ester. The polyamic acid is prepared by reacting a stoichiometric excess of a linear aromatic diamine and aromatic dianhydride to form a first reaction product where the molar ratio of said diamine to said aromatic anhydride is in the range from 100:97 to 100:99.5 and then reacting the first reaction product with an aromatic anhydride. The polyamic ester is prepared by reacting a stoichiometric excess of a linear aromatic diamine and an aromatic diester diacyl chloride to form a second reaction product where the molar ratio of said diamine to said diester diacyl chloride is in the range from 100:97 to 100:99.5 and then reacting the second reaction product with aromatic anhydride. There is at least one interconnective conductive metallurgical feature in the film a polyimide composition in contact with said conductive feature in said substrate.

Low TCE polyimides as improved insulator in multilayer interconnect

A method is provided for forming a microlithographic relief image having a width of less than one half micron in a bilayer resist composition. The resist composition comprises a single component, silicon-containing photoimageable layer and a polymeric underlayer having a high optical density and a refractive index similar to the refractive index of the overlaying resist. The method provides for the formation of a relief image in the top layer using an i-line (365 nm) or deep ultra violet (170 to 300 nm) light source, followed by O.sub.2 RIE transfer of the relief image into the polymeric underlayer.

Method of forming sub-half micron patterns with optical lithography

A protective material for use as an overcoating film for acid catalyzed resist compositions comprising a polymeric film forming compound, the films of which are impermeable to vapors of organic and inorganic bases.

Top coat for acid catalyzed resists

Viscosity stable, essentially gel-free linear polyamic acids are provided by a process utilizing offset stoichiometry. Polyimides formed from such polyamic acids have low TCE and low dielectric constants. Methods for improved adhesion of polyimides are also disclosed.

Viscosity stable, essentially gel-free polyamic acid compositions

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Pleasant Valley, NY, United States of America

Robert Neal Lang