Applied Materials, Inc.

Robert Navasca

Alexander N Lerner

Mehran Behdjat

Norman L Tam

Sundar Ramamurthy

Agus Sofian Tjandra

Yoshitaka Yokota

Kedarnath Sangam

Ming-Kuei (Michael) Tseng

Tetsuya Ishikawa

Thomas K Cho

Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.

Thermal reactor with improved gas flow distribution

An apparatus for providing facilities gas lines to a plurality of processing chambers. The apparatus comprises a rack having at least one modular gas control panel coupled thereon. A plurality of gas control panel feeds is coupled between the facilities gas lines and at least one gas control panel. Process gases are provided to individual chambers by a plurality of chamber gas lines are respectively coupled between at least one gas control panel and the plurality of processing chambers.

Modular gas panel closet for a semiconductor wafer processing platform

Growing community of inventors

Redwood City, CA, United States of America

Robert Navasca