Indium Corporation

Indium Corporation of America

Robert N Jarrett

Jordan P Ross

Ross B Berntson

James E Hisert

Craig K Merritt

Amanda Hartnett

Anthony D Lanza, Jr

Thomas R Gross

A method of joining a semiconductor die to a passive heat exchanger can include applying a bond enhancing agent to a semiconductor device; creating an assembly that includes a thermal interface disposed on the semiconductor device such that a first major surface of the thermal interface material is in touching relation with the bond enhancing agent on the semiconductor device, and a heat exchanger disposed in touching relation with a second major surface of the thermal interface material; and reflowing the assembly such that the thermal interface bonds the heat exchanger to the semiconductor device. Embodiments can use the ability of indium to bond to a non-metallic surface to form the thermal interface, which may be enhanced by a secondary coating on either or both joining surfaces.

Apparatus and methods for creating a thermal interface bond between a semiconductor die and a passive heat exchanger

A semiconductor device assembly includes: a semiconductor device; a heat exchanger; and a thermal interface material. In embodiments, the thermal interface material may contact a facing surface of the heat exchanger, the thermal interface material includes alloys that react with a bond enhancing agent to form an indium alloy layer in a portion of the thermal interface. In embodiments, a solid, solder preformed thermal interface material includes an indium metal and may be disposed on the first surface of the semiconductor device; and a liquid metal bond enhancing agent may be disposed on a first surface of the semiconductor device; and contacting a facing surface of the heat exchanger.

Semiconductor device assembly having a thermal interface bond between a semiconductor die and a passive heat exchanger

Some implementations are directed to a burn-in solder preform including: a barrier layer to prevent thermally conductive material from adhering to a semiconductor component during burn-in testing; and a thermally conductive cladding layer attached to a portion of the barrier layer such that at least one dimension of the barrier layer extends past the thermally conductive cladding layer, where the thermally conductive cladding layer is attached over the barrier layer through continuous attachment or spot attachment. In some implementations, a method includes: placing the aforementioned burn-in solder preform between a test fixture and a semiconductor component; attaching a portion of the barrier layer of the burn-in solder preform to a head of the text fixture; and after attaching a portion of the barrier layer of the burn-in solder preform to the head of the test fixture, performing burn-in testing of the semiconductor component.

Burn-in preform and method of making the same

Semiconductor device assembly including a thermal interface bond between a semiconductor die and a passive heat exchanger

Methods and apparatus are provided for attaching a heat spreader to a die and includes disposing a solder thermal interface material between a first surface of a die and a first surface of a heat spreader without disposing a liquid flux between the die and the heat spreader to form an assembly, wherein at least one of the first surface of the die and a first surface of the heat spreader have disposed thereon a metallization structure comprising a transition layer and a sacrificial metallization layer, the sacrificial metallization layer disposed as an outer layer to the metallization structure adjacent the solder thermal interface material; and heating the assembly to melt the thermal interface and attach the die to the heat spreader.

Low void solder joint for multiple reflow applications

A technique for forming a thermally conductive interface with patterned metal foil is disclosed. In one particular exemplary embodiment, the technique may be realized as a thermally conductive metal foil having at least one patterned surface for facilitating heat dissipation from at least one integrated circuit device to at least one heat sink. The metal foil preferably has a characteristic formability and softness that may be exemplified by alloys of lead, indium, tin, and other malleable metals, and/or composites comprising layers of at least one malleable metal alloy.

Growing community of inventors

Utica, NY, United States of America

Robert N Jarrett