Lucent Technologies Inc.

Agere Systems Inc.

Air Products and Chemicals, Inc.

Robert McLemore Fleming

Robert Bruce Van Dover

Lynn Frances Schneemeyer

Gordon Albert Thomas

Glenn B Alers

Glen B Alers

John William Osenbach

David A Roberts

John Anthony Thomas Norman

Arthur Kenneth Hochberg

Robert Cort Haddon

Barry Franklin Levine

Jueinai Raynien Kwo

Rafael Nathan Kleiman

Yoshihide Senzaki

Robert A Laudise

Theo Siegrist

Paul Michael Bridenbaugh

The specification describes silicon MOS devices with gate dielectrics having the composition Ta Al O , where x is 0.03-0.7 and y is 1.5-3, Ta Si O , where x is 0.05-0.15, and y is 1.5-3, and Ta Al Si O , where 0.7>x&plus;z>0.05, z<0.15 and y is 1.5-3. By comparison with the standard SiO gate dielectric material, these materials provide improved dielectric properties and also remain essentially amorphous to high temperatures. This retards formation of SiO interfacial layers which otherwise dominate the gate dielectric properties and reduce the overall effectiveness of using a high dielectric material.

MOS transistors with improved gate dielectrics

Complex mixed metal containing thin films can be deposited by CVD from liquid mixtures of metal complexes without solvent by direct liquid injection and by other precursor dispersing method such as aerosol delivery with subsequent annealing to improve electrical properties of the deposited films. This process has potential for commercial success in microelectronics device fabrication of dielectrics, ferroelectrics, barrier metals/electrodes, superconductors, catalysts, and protective coatings. Application of this process, particularly the CVD of ZrSnTiOx (zirconium tin titanate, or ZTT) and HfSnTiOx (hafnium tin titanate, or HTT) thin films has been studied successfully.

Deposition and annealing of multicomponent ZrSnTi and HfSnTi oxide thin films using solventless liquid mixture of precursors

An electro-optic device comprising an electro-optic crystal substrate, an optical waveguide path in the crystal adjacent the substrate surface and an electrode spaced from the surface by a buffer layer is provided with enhanced operating stability by forming the buffer layer of a transparent electronically conductive material. Preferred buffer materials are electronically conductive gallium-indium-oxide and electronically conductive zinc-indium-tin-oxide.

Electro-optic device including a buffer layer of transparent conductive material

The specification describes silicon MOS devices with gate dielectrics having the composition Ta.sub.1-x Al.sub.x O.sub.y, where x is 0.03-0.7 and y is 1.5-3, Ta.sub.1-x Si.sub.x O.sub.y, where x is 0.05-0.15, and y is 1.5-3, and Ta.sub.1-x-z Al.sub.x Si.sub.z O.sub.y, where 0.7&gt;x+z&gt;0.05, z&lt;0.15 and y is 1.5-3. By comparison with the standard SiO.sub.2 gate dielectric material, these materials provide improved dielectric properties and also remain essentially amorphous to high temperatures. This retards formation of SiO.sub.2 interfacial layers which otherwise dominate the gate dielectric properties and reduce the overall effectiveness of using a high dielectric material.

Apparatus for processing a silicon workpiece uses reflected UV light to measure and control the workpiece temperature. A linearly polarized beam including UV light is directed onto a silicon surface to produce a reflected beam. The reflected beam is cross-polarized to null out much of the light, and the resulting residual reflectivity spectrum is determined. The temperature is determined from the characteristics of this spectrum. A workpiece heating station uses this measuring technique to accurately control the temperature of a silicon workpiece and temperature-dependent processing over a wide range of processing temperatures, including temperatures below 500.degree. C.

Apparatus for processing silicon devices with improved temperature

A dielectric layer consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors, typically capacitors for Si integrated circuits. For instance, a significantly greater fraction of capacitors according to the invention than of prior art tantalum oxide capacitors can store a charge of 3 .mu.coulomb/cm.sup.2. In a currently preferred embodiment, the dielectric layer has composition Ta.sub.1-y Al.sub.y O.sub.x N.sub.z, with y.about.0.1, x.about.2.4, and z.about.0.02. The dielectric layer can be formed by sputter deposition or any other appropriate deposition technique, e.g., chemical vapor deposition.

Capacitor comprising improved TaO.sub.x -based dielectric

A previously unknown phase of .alpha.-hexathienyl, designated .alpha.-6T/HT, exhibits diffraction peaks at 2.theta.=4.31.degree., 8.64.degree., 12.96.degree., 17.32.degree., 26.15.degree. and 29.08.degree. in a CuK.sub..alpha. powder X-ray diffraction pattern, and is expected to have properties (e.g., high hole mobility) that make the phase desirable for use in, e.g., thin film transistors. Substitution of thin films of .alpha.-6T/HT for prior art organic thin films in thin film transistors and other devices is contemplated.

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Chatham, NJ, United States of America

Robert McLemore Fleming