Novellus Systems Incorporated

Steag Hamatech Ag

Robert Martinson

Dhairya Shrivastava

Karl B Levy

Ke Ling Lee

Ken Lee

Kaihan Abidi Ashtiani

Richard S Hill

Larry D Hartsough

Mukul Khosla

Mikhail Mazur

Mingwei Jiang

Kenneth K Barber

Mark Fissel

Soo Yun Joh

Michael Meyers

Matthew Weis

A method for a robotic semiconductor wafer processing system to correct for wafers that have become offset or off-center during wafer processing. This is accomplished by determining the amount of offset and re-centering the wafer during wafer transport to the next process station using a single station sensor to locate the wafer center point. Each single sensor located at each station activates when the wafer's edge traverses through the sensor's path. Directional coordinates for the measured designated points on the wafer's edge are calculated, and the intersection points of two circles, analytically derived from using the measured designated points as their centers, are determined. The intersection point closest to the true wafer center position represents the measured wafer's center point. This point is compared to the true wafer center position, and the wafer is then adjusted for this difference.

Method for active wafer centering using a single sensor

An apparatus and method for controlling and optimizing a non-planar target shape of a sputtering magnetron system are employed to minimize the redeposition of the sputtered material and optimize target erosion. The methodology is based on the integration of sputtered material from each point of the target according to its solid angle view of the rest of the target. The prospective target's geometry is optimized by analytically comparing and evaluating the methodology's results of one target geometry against that of another geometry, or by simply altering the first geometry and recalculating and comparing the results of the first geometry against the altered geometry. The target geometries may be of many different shapes including trapezoidal, cylindrical, parabolic, and elliptical, depending upon the optimum process parameters desired. A sputtering system is developed using this methodology, having a main magnet stack, a rotating magnet, a target having selected target shapes optimized for controlling erosion, downstream magnets, a substrate, and an electric field induced plasma stream.

Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target

A multi-level shelf degas station relying on at least two heaters integrated within wafer holding shelves or slots, where the semiconductor wafers do not have direct contact with the heater shelves. The heaters provide conduction heating. In order to degas a wafer, the heater and wafer holder assembly is positioned in a sequential manner through each wafer slot to the next available slot. If a degassed wafer exists in the slot, a transfer chamber arm removes it. A loader arm then places a wafer in the available, empty slot and the stage is moved upwards to receive the wafer from the loader arm. The transfer chamber arm removes an individual wafer from the heater and wafer holder assembly allowing the removed wafer to be individually processed while the other wafers remain in the heater and wafer holder assembly. In some instances, a loader arm may also remove wafers. The remaining wafers in the heater and wafer holder assembly are subjected to further degas treatment while the wafer(s) removed by the transfer chamber arm are exposed to other process steps. Air-cooling chambers are employed to facilitate cooling the wafer slots for ease of removal and maintenance.

Apparatus and method for enhanced degassing of semiconductor wafers for increased throughput

A plasma sputtering system that may be used to deposit a film on a substrate such as an optical disk is disclosed. In one embodiment, the sputtering system includes a main vacuum chamber. A plurality of sputtering chambers and a load lock chamber are connected to the main vacuum chamber. An assembly of a horizontal unprocessed substrate, an inner mask, and an outer mask are pressed onto a substrate transport tray that is positioned in the load lock. The tray supports the substrate and the masks throughout the processing of the substrate. A vertical lift lowers the tray from the load lock onto a carousel. The carousel transports the tray, substrate and masks to the sputtering chambers and then back to the load lock for unloading. Other lifts raise the tray, processed substrate, and masks from the carousel to the sputtering chambers. The tray is selectively pressed against the lower access aperture of the load lock and sputtering chambers so as to isolated them from the main chamber. After processing is complete, the lift pedestal at the load lock raises the tray and the substrate and masks thereon from the carousel to the load lock, whereupon the substrate and masks are removed from the sputtering system.

Horizontal sputtering system

A plasma sputtering system is described. A substrate handling system thereof places an unprocessed substrate (e.g., an optical disk), an inner mask, and an outer mask onto a tray in a loadlock of the sputtering system, and then seals the access opening to the loadlock. The substrate and the masks are moved on the tray to a sputtering chamber where the substrate is sputter coated. The substrate handing system removes the processec substrate and accompanying inner and outer masks from the tray in the loadlock to an external substrate change station, where the processed substrate is removed from the masks, which are still gripped by the substrate handling system. Another unprocessed disk is placed on the inner mask and within the outer mask, and the sequence repeats. The substrate handling system only contacts the masks on surfaces thereof that are not subjected to direct sputter deposition.

System and method for transporting and sputter coating a substrate in a sputter deposition system

Growing community of inventors

San Mateo, CA, United States of America

Robert Martinson