Applied Materials, Inc.

Robert M Haney

Joseph Michael Ranish

Aaron Muir Hunter

Johanes F Swenberg

David S Ballance

Benjamin B Bierman

Sairaju Tallavarjula

David W LaCourt

Methods for matching semiconductor plasma processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in a sample chamber. Measuring the plasma attributes during process perturbations allows for the correlation of process parameters to the plasma optical emission spectra. The process parameters can then be adjusted to yield a processed substrate which matches that of the reference chamber. Methods for monitoring the stability of a plasma processing chamber using a calibrated spectrometer are also disclosed.

Methods for plasma matching between different chambers and plasma stability monitoring and control

A substrate support comprising a shelf having a surface sloped at an angle such that the support contacts the substrate substantially at an edge portion of the substrate. The angle of the shelf is greater than an angle of the edge portion of the substrate. The surface of the shelf may be machined or polished to improve its smoothness. The substrate support thereby reduces the effect and severity of scratches on the substrate caused by the support. As a result, the substrate support improves substrate yield.

Sloped substrate support

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Mountain View, CA, United States of America

Robert M Haney