National Semiconductor Corporation

Semi Solutions LLC

Tower Semiconductor Ltd.

Fairchild Semiconductor Corporation

Other

Fairchild Camera and Instrument Corp.

Semisolution Inc.

Nif/t, LLC

Semiwise Limited

Robert J Strain

Ashok K Kapoor

William David Llewellyn

Reuven Avraham Marko

Mammen Thomas

Sharon Levin

Ishai Nachumovsky

Ira Naot

Shye Shapira

Yossi Netzer

Yaov Nissan-Cohen

Sheldon Aronowitz

Martin Harold Manley

Ramesh C Varshney

Asen Asenov

Dallin Henrie

Kranti Anand

A flat field transistor (FFT) based dynamic random-access memory (DRAM) (FFT-DRAM) is disclosed. The FFT-DRAM comprises an epitaxially grown source region comprising a source extension and an epitaxial source over and in contact with the source extension. The epitaxially grown source region is over a surface of a semiconductor substrate. The FFT-DRAM further comprises a trench capacitor structurally integrated into the epitaxially grown source region. The trench capacitor has a first terminal formed by the epitaxially grown source region and a second terminal being a conductive material filling one or more trenches of the trench capacitor. The second terminal is connected to a ground terminal or a fixed voltage terminal.

FFT-DRAM

FFT-dram

Apparatuses, systems, methods, and computer program products are presented for competitive escape rooms. A first room has a predetermined method to accomplish a task within the first room. A second room has a same predetermined method to accomplish a same task within the second room as in a first room. A hardware controller device determines in which of a first room and a second room a task is completed first by one of a plurality of competing sets of users.

Competitive escape rooms

This improved, fluctuation resistant FinFET, with a doped core and lightly doped epitaxial channel region between that core and the gate structure, is confined to the active-gate span because it is based on a channel structure having a limited extent. The improved structure is capable of reducing FinFET random doping fluctuations when doping is used to control threshold voltage, and the channel structure reduces fluctuations attributable to doping-related variations in effective channel length. Further, the transistor design affords better source and drain conductance when compared to prior art FinFETs. Two representative embodiments of the key structure are described in detail.

Fluctuation resistant FinFET

A MOSFET structure and method of manufacture that minimize threshold variations associated with statistical uncertainties of implanted source and drain extensions. The source and drain extensions are fabricated very late in the process using a material added to etched recesses immediately adjacent to the transistor's channel. In various embodiments, the added material may be germanium grown by selective epitaxy, doped silicon grown by selective epitaxy, or metallic materials created by deposition or by deposition and reaction.

Reduced variation MOSFET using a drain-extension-last process

Use of a forward biased diode to reduce leakage current of transistors implemented on silicon on insulator (SOI) is a particular challenge due to the difficulty of achieving effective contact with the region beneath the gate of the transistor. An improved implementation in SOI gate fingers that reach under the source through tunnels that are contacted with a region outside the transistor. A further embodiment uses drain extension implants to provide good channel connection.

Apparatus and method for improved leakage current of silicon on insulator transistors using a forward biased diode

An apparatus and method of manufacture for metal-oxide semiconductor (MOS) transistors is disclosed. Devices in accordance with the invention are operable at voltages below 2V. The devices are area efficient, have improved drive strength, and have reduced leakage current. A dynamic threshold voltage control scheme comprised of a forward biased diode in parallel with a capacitor is used, implemented without changing the existing MOS technology process. This scheme controls the threshold voltage of each transistor. In the OFF state, the magnitude of the threshold voltage of the transistor increases, keeping the transistor leakage to a minimum. In the ON state, the magnitude of the threshold voltage decreases, resulting in increased drive strength. The invention is particularly useful in MOS technology for both bulk and silicon on insulator (SOI) CMOS. The use of reverse biasing of the well, in conjunction with the above construct to further decrease leakage in a MOS transistor, is also shown.

Method for reducing leakage current and increasing drive current in a metal-oxide semiconductor (MOS) transistor

Metal-oxide semiconductor (MOS) transistors that are operable at voltages below 1.5V, that are area efficient, and that exhibit improved drive strength and leakage current that are disclosed. A dynamic threshold voltage control scheme is used that does not require a change to existing MOS technology processes. Threshold voltage of the transistor is controlled, such that in the Off state, the threshold voltage of the transistor is set high, keeping the transistor leakage to a small value. The advantages provided by apply to dynamic logic, as well as in the specific well separation imposed by design rules because well potential difference are lower than the supply voltage swing.

Method and apparatus for dynamic threshold voltage control of MOS transistors in dynamic logic circuits

Deep submicron wells of MOS transistors, implemented over an ungrounded well, exhibit two modes of operation: a current sink mode and a current source mode. While operation as a current sink is well understood and successfully controlled, it is also necessary to control the current provided in the current source mode of the well. A Schottky diode is connected between the well and the gate, the Schottky diode having a smaller barrier height than that of the PN junction of the well-to-source. For an NMOS transistor, current flows through the PN junction when the gate is high. When the gate is low, current flows through the Schottky diode. This difference of current flow results in a difference in transistor threshold, thereby achieving a dynamic threshold voltage using the current from the well when operating at the current source mode.

Apparatus for using a well current source to effect a dynamic threshold voltage of a MOS transistor

Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors

A Schottky diode exhibiting low series resistance is efficiently fabricated using a substantially standard CMOS process flow by forming the Schottky diode using substantially the same structures and processes that are used to form a field effect transistor (FET) of a CMOS IC device. Polycrystalline silicon, which is used to form the gate structure of the FET, is utilized to form an isolation structure between the Schottky barrier and backside structure of the Schottky diode. Silicide (e.g., cobalt silicide (CoSi)) structures, which are utilized to form source and drain metal-to-silicon contacts in the FET, are used to form the Schottky barrier and backside Ohmic contact of the Schottky diode. Heavily doped drain (HDD) diffusions and lightly doped drain (LDD) diffusions, which are used to form source and drain diffusions of the FET, are utilized to form a suitable contact diffusion under the backside contact silicide.

Gate defined Schottky diode

A Schottky diode is formed on an isolated well (e.g., a P-well formed in a buried N-well), and utilizes cobalt silicide (CoSi) structures respectively formed on heavily doped and lightly doped regions of the isolated well to provide the Schottky barrier and backside (ohmic) contact structures of the Schottky diode. The surrounding buried N-well is coupled to a bias voltage. The Schottky barrier and backside contact structures are separated by isolation structures formed using polycrystalline silicon, which is used to form the gate structure of CMOS FETs, in order to minimize forward resistance. Heavily doped drain (HDD) diffusions and lightly doped drain (LDD) diffusions, which are used to form source and drain diffusions of the FET, are utilized to form a suitable contact diffusion under the backside contact silicide.

Cobalt silicide schottky diode on isolated well

A multi-bit programmable memory cell is provided that includes an access transistor and a plurality of N anti-fuse elements. The access transistor has a source coupled to a source line and a gate coupled to a word line. Each of the anti-fuse elements has a first terminal coupled to a drain of the access transistor, and a second terminal coupled to a corresponding bit line. At most, only one of the anti-fuse elements is programmed. The memory cell is capable of storing M bits, wherein N&equals;2 &minus;1. A method is provided for both programming and reading the memory cell. In another embodiment, the anti-fuse elements can be replaced with mask-programmable elements.

Mask programmable read-only memory (ROM) cell

Multi-bit programmable memory cell having multiple anti-fuse elements

A multiple-gap head for transferring data to or from a storage medium is disclosed. Data read by the gaps are directed over a plurality of serial data paths where the data are processed and synchronized. In some embodiments, all or part of a data synchronizer is shared by the serial data paths. The data are then assembled into a parallel data stream for delivery to a computer. Reading the data simultaneously with multiple gaps increases by several times the rate at which data can be transferred to or from a storage medium. In accordance with another aspect of the invention, a three-gap head is provided to reduce or eliminate the cross-talk or noise fringe problems which reduce the track density in a storage medium. A signal attenuator and a signal inverter are connected to each of the side gaps and the outputs thereof are summed with the signal originating at the center gap, such that the inverted signals from the side gaps cancel any cross-talk originating at the center gap. Similarly, an attenuator and an inverter are connected between the write data path (leading to the center gap) and each of the side gaps. During write operations the magnetic flux produced at each of the side gaps has the effect of focusing the magnetic flux produced at the center gap, thereby reducing or eliminating the noise fringe of the written data track.

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San Jose, CA, United States of America

Robert J Strain