Ekc Technology Inc.

Dupont Air Products Nanomaterials, LLC

Other

Da Nanomaterials L.l.c.

Air Products and Chemicals, Inc.

Advanced Process Technologies, Inc.

Ekc Technologies, Inc.

Wesley Ii Limited Partnership

Robert J Small

Maria L Peterson

Wai Mun Lee

David J Maloney

Charles U Pittman, Jr

Laurence McGhee

Melvin Keith Carter

Bakul P Patel

Tuan Truong

Zhefei J Chen

Lily Yao

Brandon Shane Scott

De-Ling Zhou

Jerome Daviot

Douglas Holmes

Philippe H Chelle

Christopher G Hayden

Chris Reid

Jun Cheng

Donald William Frey

Xiaowei Cass Shang

Joo-Yun Lee

Junaid Ahmed Siddiqui

Haruki Nojo

Shihying Lee

Lionel Bonneau

Mihaela Cernat

Jean Claude Drouget

Tuan Troung

Taishih Maw

Kenichi Orui

Steve Masami Aragaki

Bruce Tredinnick

Atsushi Hayashida

Daniel Hernandez Castillo

Richard William Charm

Danny L Wallis

A composition for chemical-mechanical planarization comprises periodic acid and an abrasive present in a combined amount sufficient to planarize a substrate surface having a feature thereon comprising a noble metal, noble metal alloy, noble metal oxide, or any combination thereof. In one embodiment, the periodic acid is present in an amount in a range of from about 0.05 to about 0.3 moles/kilogram, and the abrasive is present in an amount in a range of from about 0.2 to about 6 weight percent. In another embodiment, the composition further comprises a pH-adjusting agent present in an amount sufficient to cause the pH of the composition to be in a range of from about pH 5 to about pH 10, or of from about pH 1 to about pH 4. A method for planarizing a substrate surface having a feature thereon comprising at least one noble metal, noble metal alloy, or noble metal oxide, or a combination thereof, comprises providing a composition or slurry comprising periodic acid and an abrasive in a combined amount sufficient to planarize the substrate surface, and polishing the surface with the slurry. A substrate produced by such a method is also provided.

Compositions for chemical-mechanical planarization of noble-metal-featured substrates, associated methods, and substrates produced by such methods

This invention relates to compositions and methods for removing overfilled substrates, preferably at a relatively high removal rates. Advantageously, a composition according to the invention can contain an oxidizer, preferably a per-type oxidizer such as a peroxide, periodic acid, and peracetic acid, and may also optionally contain an abrasive.

Compositions and methods for rapidly removing overfilled substrates

A method of polishing a semiconductor substrate surface having at least one ruthenium feature thereon and at least one dielectric material, wherein the substrate is contacted with an aqueous composition containing from about 0.0005 to about 1 moles/kilogram of periodic acid, from about 0.2% to about 6% % by weight of silica abrasive having an average particle size of about 50 nm or less, and an amine in an amount sufficient to adjust the pH of the composition to between about 2.5 and 7. The removal selectivity of the ruthenium to a. low-K dielectric is greater than 20:1. Advantageously, the substrate further has a tantalum-containing compound, and the polishing rate of the tantalum-containing compound is about the same as the polishing rate of the ruthenium, so that the polishing process is a one-step process.

Periodic acid compositions for polishing ruthenium/low K substrates

A method of cleaning a substrate includes contacting a surface of a semiconductor substrate with a composition comprising a superacid. The semiconductor substrate may be a wafer.

Semiconductor cleaning using superacids

An apparatus and method is disclosed for enhancing the aesthetic appearance of lamps. A support structure may be provided for attaching to the lamp. The support structure may be attached in a manner such that the support structure may be hidden from view by the lamp shade. The support structure may be versatile to be attached to lamps of various different configurations. One or more decorative ornaments may be attached to the support structure for enhancing the appearance of the lamp. The ornaments may be removed and interchanged with other decorations such that the lamp may be decorated differently for different occasions.

Decorative lamp illuminations structure

Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates

A CMP composition having: a fluid comprising water and at least one oxidizing compound that produces free radicals when contacted with an activator; and a plurality of particles having a surface and comprising at least one activator selected from ions or compounds of Cu, Fe, Mn, Ti, or mixtures thereof disposed on said surface, wherein at least a portion of said surface comprises a stabilizer. Preferred activators are selected from inorganic oxygen-containing compounds of B, W, Al, and P, for example borate, tungstate, aluminate, and phosphate. The activators are preferably ions of Cu or Fe. Surprisingly, as little as 0.2 ppm and 12 ppm of activator is useful, if the activator-containing particles are suspended in the fluid as a slurry. Advantageously, certain organic acids, and especially dihydroxy enolic acids, are included in an amount less than about 4000 ppm. Advantageously, activator is coated onto abrasive particles after the particles have been coated with stabilizer.

Free radical-forming activator attached to solid and used to enhance CMP formulations

A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.

Compositions for cleaning organic and plasma etched residues for semiconductor devices

This invention relates to a method of making selected oxidizers or other free radical-producing compounds become more effective chemical etchants and/or oxidizers for CMP activities by promoting the formation of the free radicals in a CMP composition with one or more activators. The activator comprises iron, copper or combinations thereof. The activator coated abrasive is particularly effective as it brings the activator in close proximity to the targeted material on the substrate surface, and thus facilitates or accelerates the removal reaction substantially at the site of the targeted material. The activator reacts with the per-type oxidizer to form at least one oxygen-containing free radical. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced by this method.

The invention generally relates to compositions and methods for chemically mechanically polishing a substrate, including a polishing accelerator, which is normally one or more oxidizers, an abrasive material, and chelating particles and/or metal-absorbent clay material. In addition, the invention can also involve methods of forming chelator particles and methods of separating metal-containing ions from polishing and/or etching solutions after polishing and/or etching.

Particulate or particle-bound chelating agents

A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined.

Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials

The use of mixed cerium-containing synthetic solid abrasive materials in chemical mechanical polishing slurries can provide better selectivity, better substrate removal rates, or lower defect rates than conventional ceria slurries. The slurries have abrasive particles that include a plurality of solid cerium-containing phases selected from CeO, CeO, cerium-nitride material, cerium-fluoride material, and cerium-sulfide material, where different cerium-containing materials are present in different particles or on the same particles.

Cerium oxide abrasives for chemical mechanical polishing

A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied to produce a differential removal of the metal and the dielectric material. The pH of the slurry and the selectively oxidizing and reducing compound is adjusted to provide the differential removal of the metal and the dielectric material. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material, and an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid.

Chemical mechanical polishing composition and process

Growing community of inventors

Dublin, CA, United States of America

Robert J Small