Silicon Valley Group, Thermal Systems Llp

Other

Aviza Technology Limited

Asml Us, Inc.

Wj Semiconductor Equipment Group, Inc.

Silicon Valley Group Thermal System LLC

Robert J Bailey

Lawrence Duane Bartholomew

Thomas E Kane

Lisa H Michael

Robert A Ewald

Soon K Yuh

Seung Gyun Park

Jack Chihchieh Yao

John T Boland

Patrick J Brady

An apparatus for allowing an individual to simply assemble a transparent cylindrical conduit sectioned track system which guides a self propelled toy vehicle through this track system. A self propelled toy vehicle designed to run securely through transparent cylindrical conduit track prohibiting the toy vehicle from falling off of the track, an easy to assemble the transparent cylindrical sections, and an interlocking structure to ensure the fitting of the track sections are secure enough to remain intact for normal use. A portable means for an individual to carry said self-propelled toy vehicle and the various shaped transparent cylindrical track sections.

Toy tube vehicle racer apparatus

An atmospheric pressure wafer processing system for delivering at least one gas is provided, having an exhaust control feedback system that utilizes sensors to measure the pressure within the system and adjusts control units to maintain the desired set pressures within the system. In particular the sensors measure the small differential pressures inside a muffle, and specifically the load, bypass center and unload sections of the muffle, relative to the chase ambient pressure. Controlling the muffle pressures directly within the atmospheric system yields a more stable pressure balance for processing wafers less subject to changes in the external environment and allows for compensation of varying input gas flows as occurs when the supply pressure to the system may vary. This system and method of pressure control is particularly advantageous for chemical vapor deposition application yielding improved process repeatability over an extended period of runtime.

Atmospheric pressure wafer processing reactor having an internal pressure control system and method

A chemical vapor deposition (CVD) system is provided for processing a substrate The system includes a heated muffle a chamber having an injector assembly for introducing chemical vapor to process the substrate and a belt for moving the substrate through the muffle and chamber. The belt has an oxidation-resistant coating to reduce formation of deposits thereon. The coating is particularly useful for resisting formation of chromium oxides on belts made from a chromium-containing alloy. In one embodiment, the oxidation-resistant coating comprises a securely-adhered oxide layer that is substantially free of transition metals. Preferably, the oxidation-resistant coating comprises aluminum oxide. More preferably, the coating comprises an aluminum oxide layer securely adhered over a nickel aluminide layer

Chemical vapor deposition system

A chemical vapor deposition (CVD) system is provided for processing a substrate,. The system,includes a heated muffle,, a chamber,having an injector assembly,for introducing chemical vapor to process the substrate,, and a belt,for moving the substrate through the muffle and chamber. The belt,has an oxidation-resistant coating,to reduce formation of deposits thereon. The coating,is particularly useful for resisting formation of chromium oxides on belts made from a chromium-containing alloy. In one embodiment, the oxidation-resistant coating,comprises a securely-adhered oxide layer,that is substantially free of transition metals. Preferably, the oxidation-resistant coating,comprises aluminum oxide. More preferably, the coating,comprises an aluminum oxide layer,securely adhered over a nickel aluminide layer

Chemical vapor deposition system and method

A wafer processing system for delivering a processing gas and an inert gas to a chamber which includes a CVD processing region having a plurality of gas flow paths for conveying the gases to the chamber and exhausting them from the chamber. A flow control system is coupled to each of the exhaust gas flow paths and each of the process gas exhaust flow paths are separately controlled to maintain a constant rate of flow within each of the gas flow paths, independent of the accumulation of deposition byproducts. Utilization of a self-cleaning orifice allows a pressure differential measurement in a process exhaust line to measure flow. The wafer processing system is provided with load and unload regions surrounding the chamber(s), each having additional inert gas exhaust flow paths. A flow characteristic, preferably pressure differential across an orifice, of the gases in each of the regions is measured and a flow control unit is selectively adjusted to maintain a substantially constant exhaust flow rate from each of the regions, in order to compensate for any pressure imbalance across the chamber due to internal (thermal load) or external (environmental) asymmetry that would degrade the performance of an APCVD system.

Wafer processing reactor having a gas flow control system and method

A wafer carrier is provided comprised of a circular plate having a flat edge region extending around the circumference of the plate. The plate has a circular recessed center region with a recessed bottom surface and includes an upwardly inclined surface around the periphery of the recessed bottom surface. A substrate is placed in the center region where it is supported by a portion of the upwardly inclined surface and is spaced apart form the recessed bottom surface such that the substrate is supported only around its edge. The wafer carrier minimizes surface contact with the substrate thereby minimizing metal contamination and surface damage to the backside of a substrate and prevents deposition on the backside of the substrate.

Wafer carrier and semiconductor apparatus for processing a semiconductor

A method of reducing metal contamination during semiconductor processing in a reactor having metal components is provided. The method includes forming an aluminum oxide layer on the surface of certain of the metal components before processing of substrates. The aluminum oxide layer substantially prevents the formation of volatile metal atoms from the metal components. The aluminum oxide layer is formed by heating the metal component first in a dry N.sub.2 atmosphere to a first temperature, and then in a dry H.sub.2 atmosphere to a second temperature. The component is then soaked at the second temperature in a wet H.sub.2 atmosphere to form the aluminum oxide layer, and is followed by soaking at the second temperature in a dry H.sub.2 atmosphere to reduce any other metal oxides that may have formed. The component is then cooled first in a dry H.sub.2 atmosphere, and then in a dry N.sub.2 atmosphere where a layer of substantially pure aluminum oxide is provided on the surface of the metal component.

Growing community of inventors

Santa Cruz, CA, United States of America

Robert J Bailey