Siltronic Ag

Robert Hölzl

Reinhold Wahlich

Wilfried Von Ammon

Andreas Huber

Ulrich Lambert

Dirk Dantz

Christoph Seuring

A process for producing a single-crystal silicon wafer, comprises the following steps: is satisfied, where [Oi] is an oxygen concentration in the silicon wafer, [Oi](T) is a limit solubility of oxygen in silicon at a temperature T, &#x3c3;is the surface energy of silicon dioxide, &#x3a9; is a volume of a precipitated oxygen atom, r is a mean COP radius and k the Boltzmann constant, with the silicon wafer, during the heat treatment, at least part of the time being exposed to an oxygen-containing atmosphere.

Silicon wafer and process for producing it

An SOI wafer, includes a substrate made from silicon, an electrically insulating layer with a thermal conductivity of at least 1.6 W/(Km) and a single-crystal silicon layer with a thickness of from 10 nm to 10 &#x3bc;m, a standard deviation of at most 5% from the mean layer thickness and a density of at most 0.5 HF defects/cm. A process is for producing an SOI wafer of this type, in which a substrate wafer made from silicon is joined to a donor wafer via a layer of the electrically insulating material which has previously been applied. The donor wafer bears a donor layer of single-crystal silicon, with a concentration of vacancies of at most 10/cmand of vacancy agglomerates of at most 10/cm. After the wafers have been joined, the thickness of the donor wafer is reduced in such a manner that the single-crystal silicon layer having these properties is formed from the donor layer, this single-crystal silicon layer being joined to the substrate wafer via the layer of electrically insulating material.

SOI wafer and process for producing it

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Postmünster, Germany

Robert Hölzl