Ibis Technology Corporation

Robert Dolan

Maria J Anc

Geoffrey Ryding

Marvin Farley

Micahel L Alles

Bernhard Cordts

Bernhardt F Cordts, Iii

An ion implantation system for producing silicon wafers having relatively low defect densities, e.g., below about 1&#xd7;10/cm, includes a fluid port in the ion implantation chamber for introducing a background gas into the chamber during the ion implantation process. The introduced gas, such as water vapor, reduces the defect density of the top silicon layer that is separated from the buried silicon dioxide layer.

SIMOX using controlled water vapor for oxygen implants

The present invention provides a method for creation of high quality semiconductor-on-insulator structures, e.g., silicon-on-insulator structures, using implantation of sub-stoichiometric doses of oxygen at multiple energies. The method employs sequential steps of ion implantation and high temperature annealing to produce structures with a top silicon layer having a thickness ranging from 10-250 nm and a buried oxide layer having a thickness 30-300 nm. The buried oxide layer has a breakdown field greater than 5 MV/cm. Further, the density of silicon inclusions in the BOX region is less than 2&times;10 cm . The process of the invention can be used to create an entire SOI wafer, or be used to create patterned SOI, regions where SOI regions are integrated with non-SOI regions.

Implantation process using substoichiometric, oxygen doses at different energies

Methods of producing buried insulating layers in semiconductor substrates are disclosed whereby a dose of selected ions is implanted into a substrate to form a buried precursor layer below an upper layer of the substrate, followed by oxidation of the substrate in an atmosphere having a selected oxygen concentration to form an oxide surface layer. The oxidation is performed at a temperature and for a time duration such that the formation of the oxide layer causes the injection of a controlled number of atoms of the substrate from a region proximate to an interface between the newly formed oxide layer and the substrate into the upper regions of the substrate to reduce strain. A high temperature annealing step is then performed to produce the insulating layer within the precursor layer.

Low defect density, thin-layer, SOI substrates

Implantation process using sub-stoichiometric, oxygen doses at different energies

An ion implantation system for producing silicon wafers having relatively low defect densities, e.g., below about 1&times;10,/cm,, includes a fluid port in the ion implantation chamber for introducing a background gas into the chamber during the ion implantation process. The introduced gas, such as water vapor, reduces the defect density of the top silicon layer that is separated from the buried silicon dioxide layer.

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Hudson, NH, United States of America

Robert Dolan