Applied Materials, Inc.

Cisco Technology, Inc.

Robert Chen

Ellie Y Yieh

Qiwei Liang

Canfeng Lai

Siqing Lu

Dmitry Lubomirsky

Muhammad M Rasheed

Young Seen Lee

Xinglong Chen

Zhong Qiang Hua

Weiyi Luo

Anchuan Wang

Ming Chi Chen

Jason T Bloking

Steven H Kim

Mick Henniger

James Everett Grishaw

Jing Wu

Sanjoy Dey

Irene Chou

A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

Internal balanced coil for inductively coupled high density plasma processing chamber

A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces e a gas into the process chamber through side nozzles positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system is operatively coupled with the process chamber. The substrate holder is disposed within the process chamber and supports a substrate during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.

Two-piece dome with separate RF coils for inductively coupled plasma reactors

A method for forming a compressive film over a field effect transistor over a substrate is provided. The field effect transistor includes a channel region between a drain and a source within the substrate. The channel region is controlled by a gate electrode. The method includes depositing a diamond-like carbon (DLC) film over the field effect transistor to compress the channel region by generating a plasma of a processing gas including a precursor gas and an additive gas, wherein the precursor substantially includes only CHand the additive gas includes Ar.

High stress diamond like carbon film

A method and apparatus for implementing host management of an intelligent daughtercard utilizes a high-speed serial link and a defined plurality of serial protocol commands to provide high bandwidth control path for management of daughtercard memory and application specific initialization and/or configuration changes.

Serial protocol for efficient messaging between host and intelligent daughtercards over a serial link

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Fremont, CA, United States of America

Robert Chen