Tegal Corporation

Oem Group, LLC

Robert C Vail

Stephen P DeOrnellas

Alferd Cofer

Leslie G Jerde

Kurt A Olson

A plasma etch reactorincludes a upper electrode, a lower electrode, a peripheral ring electrodedisposed therebetween. The upper electrodeis grounded, the peripheral electrodeis powered by a high frequency AC power supply, while the lower electrodeis powered by a low frequency AC power supply, as well as a DC power supply. The reactor chamberis configured with a solid sourceof gaseous species and a protruding baffle. A nozzleprovides a jet stream of process gases in order to ensure uniformity of the process gases at the surface of a semiconductor wafer. The configuration of the plasma etch reactorenhances the range of densities for the plasma in the reactor, which range can be selected by adjusting more of the power supplies

Plasma etch reactor and method

A plasma etch reactor includes a upper electrode , a lower electrode , a peripheral ring electrode disposed therebetween. The upper electrode is grounded, the peripheral electrode is powered by a high frequency AC power supply, while the lower electrode is powered by a low frequency AC power supply, as well as a DC power supply. The reactor chamber is configured with a solid source of gaseous species and a protruding baffle . A nozzle provides a jet stream of process gases in order to ensure uniformity of the process gases at the surface of a semiconductor wafer . The configuration of the plasma etch reactor enhances the range of densities for the plasma in the reactor , which range can be selected by adjusting more of the power supplies

A plasma etch reactor includes a reactor chamber with a grounded upper electrode , a lower electrode which is attached to a high frequency power supply and a low frequency power supply , and a peripheral electrode which is located between the upper and lower electrode, and which is allowed to have a floating potential. Rare earth magnets are used to establish the magnetic field which confines the plasma developed within the reactor chamber . The plasma etch reactor is capable of etching emerging films used with high density semiconductor devices.

Plasma etch reactor and method for emerging films

Plasma etch reactor having a plurality of magnets

A plasma etch reactor,includes a reactor chamber,with a grounded upper electrode,a lower electrode 28 which is attached to a high frequency power supply,and a low frequency power supply,and a peripheral electrode,which is located between the upper and lower electrode, and which is allowed to have a floating potential. Rare earth magnets,are used to establish the magnetic field which confines the plasma developed within the reactor chamber,The plasma etch reactor,is capable of etching emerging films used with high density semiconductor devices.

A plasma etch reactor 20 includes a reactor chamber 22 with a grounded upper electrode 24, a lower electrode 28 which is attached to a high frequency power supply 30 and a low frequency power supply 32, and a peripheral electrode 26 which is located between the upper and lower electrode, and which is allowed to have a floating potential. Rare earth magnets 46, 47 are used to establish the magnetic field which confines the plasma developed within the reactor chamber 22. The plasma etch reactor 20 is capable of etching emerging films used with high density semiconductor devices.

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Windsor, CA, United States of America

Robert C Vail