Integrated Device Technology, Inc.

Set, Tosoh

Robert B Hixson

Jose Luis Gonzalez

Gary William Groshong

Jason L Monfort

Shih-Ked Lee

Guo-Qiang Lo

Wanqing Cao

Eric Lee

David Bruce Jordan

Disclosed is a shielding assembly for use within a substrate deposition processing chamber. The shielding assembly permits sputtering and evaporation processes to take place without the target material depositing upon the internal non-disposable surfaces of the chamber. The shielding assembly is of an improved construction which permits it to be uncoupled from an adapter plate without the need for removing the adapter plate from the deposition chamber.

Shield assembly for substrate processing chamber

Physical vapor deposition (PVD) system comprises a chamber, an upper shield and a lower shield mounted within the chamber, a cover ring having one or more tabs extending radially inwardly therefrom. The PAD system further includes a shutter disk having one or more notched areas formed in the periphery thereof to receive non-contacting the one or more tabs of the cover ring. The cover ring has two or more recesses formed in an upper side thereof with a guide pin extending from the center of the recesses. The lower shield has two or more cups with a hole therein to be engaged with the guide pin of the cover ring to keep the lower shield from rotating with respect to the cover ring. The cups of the lower shield are inserted into the recesses of the cover ring. These improvements enable a standard shutter arm assembly and a shutter disk to be utilized in a two-tab block-out scheme.

Physical vapor deposition apparatus with modified shutter disk and cover ring

Disclosed are methods and systems for forming salicide, in which a semiconductor substrate is provided with at least one exposed silicon surface. The semiconductor substrate is placed into a sputtering chamber. A silicide-forming metal layer, formed of a metal such as Co, Ni, is sputter-deposited over the exposed silicon surface. A process temperature is controlled below room temperature during the sputter deposition and preferably between approximately 0&deg; C. to 10&deg; C. The silicide-forming metal layer formed on the exposed silicon surface is first annealed to convert the silicide-forming metal layer into a salicide layer. Also, the system of the present invention is comprised of a sputter chamber including a mount for mounting a semiconductor substrate and a cooling mechanism coupled with the mount for cooling the semiconductor substrate. The cooling mechanism includes a controller to maintain a process temperature below room temperature. Improved device characteristics such as increased charge-to-breakdown can be achieved in the devices according to the present invention compared to the devices with high-temperature sputtered salicide.

Low-temperature sputtering system and method for salicide process

Physical vapor deposition (PVD) system comprises a chamber, an upper shield and a lower shield mounted within the chamber, a cover ring having one or more tabs extending radially inwardly therefrom. The PVD system further includes a shutter disk having one or more notched areas formed in the periphery thereof to receive non-contactingly the one or more tabs of the cover ring. The cover ring has two or more recesses formed in an upper side thereof with a guide pin extending from the center of the recesses. The lower shield has two or more cups with a hole therein to be engaged with the guide pin of the cover ring to keep the lower shield from rotating with respect to the cover ring. The cups of the lower shield are inserted into the recesses of the cover ring. These improvements enable a standard shutter arm assembly and a shutter disk to be utilized in a two-tab block-out scheme.

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Portland, OR, United States of America

Robert B Hixson