Raytheon Company

Raython Company

Robert B Hallock

Thomas E Kazior

John Michael Bedinger

Michael A Moore

Kamal Tabatabaie

William J Davis

Kamal Tabatabaie Alavi

Weldon S Williamson

Susan C Trulli

Jason G Milne

James A Robbins

Ward G Fillmore

Charles B Willingham

Kamal Tabatabaie-Alavi

Yiwen Zhang

Richard M Alexy

A package and method for packaging a semiconductor device formed in a surface portion of a semiconductor wafer. The package includes: a dielectric layer disposed on the surface portion of the semiconductor wafer having a device exposing opening to expose one of the devices and an electrical contacts pad opening to expose an electrical contact pad; and a porous material in the device exposing opening over said one of the devices.

Method for packaging semiconductors at a wafer level

A MMIC flip chip mounted to a circuit board having an underfill material disposed between the MMIC and the circuit board and a barrier structure for preventing the underfill material from being disposed under an electronic device of the MMIC while providing a cavity under the electronic device.

Flip chip mounted monolithic microwave integrated circuit (MMIC) structure

According to one embodiment of the disclosure, a method for passivating a circuit device generally includes providing a substrate having a substrate surface, forming an electrical component on the substrate surface, and coating the substrate surface and the electrical component with a first protective dielectric layer. The first protective dielectric layer is made of a generally moisture insoluble material having a moisture permeability less than 0.01 gram/meter/day, a moisture absorption less than 0.04 percent, a dielectric constant less than 10, a dielectric loss less than 0.005, a breakdown voltage strength greater than 8 million volts/centimeter, a sheet resistivity greater than 10ohm-centimeter, and a defect density less than 0.5/centimeter.

Passivation layer for a circuit device and method of manufacture

A semiconductor structure and method wherein a recess is disposed in a surface portion of a semiconductor structure and a dielectric film is disposed on and in contract with the semiconductor. The dielectric film has an aperture therein. Portions of the dielectric film are disposed adjacent to the aperture and overhang underlying portions of the recess. An electric contact has first portions thereof disposed on said adjacent portions of the dielectric film, second portions disposed on said underlying portions of the recess, with portions of the dielectric film being disposed between said first portion of the electric contact and the second portions of the electric contact, and third portions of the electric contact being disposed on and in contact with a bottom portion of the recess in the semiconductor structure. The electric contact is formed by atomic layer deposition of an electrically conductive material over the dielectric film and through the aperture in such dielectric film.

Atomic layer deposition in the formation of gate structures for III-V semiconductor

A microwave window structure for a low-pressure chamber is provided. The window structure enables microwave energy to be introduced into the chamber from a source external to the chamber. The window structure includes a fixture having electrically conductive walls. Inner portions of the walls provide a peripheral region of an aperture within such fixture. The fixture is adapted for mounting to a sidewall portion of the chamber. A solid, microwave energy transparent dielectric window is included. The window includes: a periphery portion affixed to the fixture; and, an inner region disposed within the aperture of the fixture.

High-power microwave window

Growing community of inventors

Newton, NH, United States of America

Robert B Hallock