Motorola Corporation

Robert Arthur Rodriguez

Heather Marie Klesat

Robert E Booth

Douglas J Dopp

A method for forming void free tungsten plug contacts ( ) begins by etching a contact opening ( ) using a C F and CHF chemistry. The etch chemistry is then changed to an O and CH F chemistry in order to insitu remove the contact photoresist while tapering an upper portion of the contact opening. A tungsten deposition process is then performed whereby the tapered portion of the contact reduces the effects of nonconformal and step-coverage-inconsistent tungsten deposition wherein voids in the contact are either substantially reduced or totally avoided within the contact structure. The reduction of or total elimination of voids ( ) within the tungsten contact will increase yield, increase reliability, and reduce electromigration failures within integrated circuit devices.

Method for forming a conductive plug between conductive layers of an integrated circuit

A method for forming void free tungsten plug contacts (56a-56c) begins by etching a contact opening (55a-55c) using a C.sub.2 F.sub.6 and CHF.sub.3 chemistry. The etch chemistry is then changed to an O.sub.2 and CH.sub.3 F chemistry in order to insitu remove the contact photoresist while tapering an upper portion of the contact opening. A tungsten deposition process is then performed whereby the tapered portion of the contact reduces the effects of nonconformal and step-coverage-inconsistent tungsten deposition wherein voids in the contact are either substantially reduced or totally avoided within the contact structure. The reduction of or total elimination of voids (22) within the tungsten contact will increase yield, increase reliability, and reduce electromigration failures within integrated circuit devices.

Method for forming an integrated circuit

A method for manufacturing an static random access memory (SRAM) cell (10) begins by manufacturing a fuse region (36) over a substrate (10). An etch stop layer (44) is formed overlying the fuse region (36) from resistor polysilicon material. In order for the fuse region (36) to be accessed and properly disabled, an opening (60) must be provided which stops on the etch stop layer (44). The etch stop (44) ensures a consistent and repeatable optimal thickness X of dielectric material above the fuse region (36) to provide for proper laser access and repair. The etch stop layer (44) therefore reduces wafer to wafer and die to die variation in thickness X and provides for a higher yield laser repair for each SRAM integrated circuit and every wafer processed using this methodology.

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Austin, TX, United States of America

Robert Arthur Rodriguez