Tegal Corporation

Asm International N.v.

Aixtron Se

Oem Group, LLC

Robert A Ditizio

Stephen P DeOrnellas

Tue H Nguyen

Tai Dung Nguyen

Somnath S Nag

Maxim Kelman

Zhongyuan Jia

Described herein are techniques for forming an epitaxial III-V layer on a substrate. In a pre-clean chamber, a native oxygen layer may be replaced with a passivation layer by treating the substrate with a hydrogen plasma (or products of a plasma decomposition). In a deposition chamber, the temperature of the substrate may be elevated to a temperature less than 700&#xb0; C. While the substrate temperature is elevated, a group V precursor may be flowed into the deposition chamber in order to transform the hydrogen terminated (Si&#x2014;H) surface of the passivation layer into an Arsenic terminated (Si&#x2014;As) surface. After the substrate has been cooled, a group III precursor and the group V precursor may be flowed in order to form a nucleation layer. Finally, at an elevated temperature, the group III precursor and group V precursor may be flowed in order to form a bulk III-V layer.

Formation of a layer on a semiconductor substrate

A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The NLD process is a cyclic sequential deposition process, comprising introducing a first plurality of precursors to deposit a thin layer with the deposition process not self limiting, followed by introducing a second plurality of precursors for plasma treating the thin deposited layer. The plasma can be isotropic, anisotropic, or a combination of isotropic and anisotropic to optimize the effectiveness of the treatment of the thin deposited layers.

Nanolayer deposition using bias power treatment

A NanoLayer Deposition (NLD) process for depositing composite films of tertiary, quaternary, pentanary, and hexary stoichiometric films is provided. The inventive deposition process is a cyclic process consisting of a sequence of thin film deposition and treatment steps to obtain a desired film stoichiometry. The deposition steps are not self-limiting as in atomic layer deposition. In one embodiment for depositing a compound oxide film, the deposition process comprises a first deposition, followed by a hydrogen-containing plasma treatment, a second deposition followed by a hydrogen-containing plasma treatment, and then a third deposition followed by a hydrogen-containing plasma and then an oxygen-containing plasma treatment to produce a stoichiometric quaternary film. The cyclic process is repeated until the desired overall film thickness is achieved. The inventive process is used to fabricate high k dielectric films, ferroelectric films, piezoelectric films, and other complex oxides.

NanoLayer Deposition process for composite films

The present invention relates generally to semiconductor fabrication and particularly to fabricating magnetic tunnel junction devices. In particular, this invention relates to a method for using the dielectric layer in tunnel junctions as an etch stop layer to eliminate electrical shorting that can result from the patterning process.

Dry etch stop process for eliminating electrical shorting in MRAM device structures

Magnetic tunnel junction (MTJ) devices can be fabricated by a stop-on-alumina process whereby the tunnel junction layer serves as the stop layer during plasma overetching of the upper magnetic layer. The resulting side walls of the MTJ device are non-vertical in the vicinity of the tunnel junction layer which serves to electrically isolate the upper magnetic layer from the lower magnetic layer. The gas employed during plasma overetching excludes halogen containing species which results in highly selective etching of the magnetic layer vis-&#xe0;-vis the alumina tunnel barrier layer. The introduction of oxygen in the gas may enhance the reproducibility of the overetch process. Finally, plasma treatment with He and Hfollowed by rinsing and baking subsequent to removal of the photoresist mask during the fabrication process enhances yield.

System and method for processing a wafer including stop-on-aluminum processing

A rotary transformer includes a resonant circuit and a coil drive circuit. The resonant circuit includes a resonating capacitor connected to a power MOS transistor, coupled across the primary coil of the transformer. The coil drive circuit includes a diode connected to a power MOS transistor coupled across the primary coil of the transformer. A microprocessor detects changes in the voltage across the primary coil. The resonant circuit is connected and disconnected from the transformer during a power transfer mode and a data transfer mode, respectively. During the power transfer mode, stored energy in the leakage inductance of the primary coil is used for power coupling, via the resonant circuit, instead of being dissipated as heat. The resonant circuit is disconnected from the rotary transformer during the data transfer mode to maximize bandwidth for two-way data transfer between the primary and secondary sides of the transformer. The transformer uses a synchronous mode of operation in which the power MOS transistor of the coil drive circuit is turned on when the voltage across the primary coil changes from a positive to a negative value during the power transfer mode. The synchronous mode of operation virtually eliminates a current spike through the diode of the coil drive circuit and provides the microprocessor an appropriate amount of time to recognize the voltage changes across the primary coil.

Deposition shield for a plasma reactor

A reactor includes a shield which prevents the deposition of materials along a line-of-sight path from a wafer toward and onto an electrode , or a window which couples an electrode to a reaction chamber of the reactor . The shield can be comprised of a conductor and/or an insulator. The shield can affect the character of a plasma generated in the reactor.

Plasma reactor with a deposition shield

A reactor,includes a shield,which prevents the deposition of materials along a line-of-sight path from a wafer,toward and onto an electrode,, or a window,which couples an electrode,to a reaction chamber of the reactor,. The shield can be comprised of a conductor and/or an insulator. The shield can affect the character of a plasma generated in the reactor.

A reactor 20 includes a shield 50 which prevents the deposition of materials along a line-of-sight path from a wafer 26 toward and onto an electrode 32, or a window 38 which couples an electrode 32 to a reaction chamber of the reactor 20. The shield can be comprised of a conductor and/or an insulator. The shield can affect the character of a plasma generated in the reactor.

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Petaluma, CA, United States of America

Robert A Ditizio