Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Rie Itoh

Noriaki Matsuno

Eiichi Sadayuki

Masato Tsunoda

A frequency sensor includes at least one a resistor element and a capacitor. A frequency is detected according to a charging/discharging time to/from the capacitor, thereby realizing a frequency sensor with reduced power consumption and reduced circuit scale. Further, plural resistors and plural capacitors can be provided, along with switches connected to the respective resistors and capacitors. Additionally, a time constant can be adjusted after production, whereby variations in production can be reduced. Furthermore, a self-diagnosis circuit can be included for determining whether the frequency sensor itself operates normally or not. Thus, a highly-reliable frequency sensor can be realized.

Frequency sensor and semiconductor device

A semiconductor integrated circuit device () is composed of an LSI function unit () and a shield wiring layer () formed on the unit. The LSI function unit () includes a semiconductor substrate () and a first insulating film (), and the semiconductor substrate () is formed with a circuit element including, for example, a MOS transistor (). The shield wiring layer () is composed of a lower shield line (), a third insulating film (), an upper shield line (), and a fourth insulating film () sequentially stacked above a second insulating film (). The directions in which the lower and upper shield lines () and () are arranged intersect each other.

Growing community of inventors

Osaka, Japan

Rie Itoh