Fujifilm Planar Solutions, LLC

Planar Solutions, LLC

Richard Wen

Deepak Mahulikar

Bin Hu

Hyungjun Kim

Minae Tanaka

Abhudaya Mishra

Luling Wang

Abhiskek Singh

Gert Moyaerts

The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKa)&#x3c;pKa&#x3c;18 (pKa)). The pKa values of the individual components are related to the pH of the polishing composition/slurry (pH) by the following equation: pKa+6&#x3c;pH&#x3c;pKa&#x2212;6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than about 100 ppm of halide ions, and operates in the 7-12 pH range.

Polishing compositions and methods for polishing cobalt films

The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.

Composition for advanced node front-and-back-end of line chemical mechanical polishing

Composition for advanced node front-and back-end of line chemical mechanical polishing

The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.

Highly dilutable polishing concentrates and slurries

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Mesa, AZ, United States of America

Richard Wen