Advanced Micro Devices Corporation

Lsi Logic Corporation

Lsi Corporation

Globalfoundries Inc.

Ati Technologies Ulc

Ls1 Corporation

Richard Thomas Schultz

Frank Scott Johnson

Derryl D Allman

John J Wuu

Michael Schmidt

Jan Fure

Thomas R O'Brien

Donald R Weiss

Peter J Wright

Stefan G Block

Viswanathan Lakshmanan

Robert D Waldron

John D Walker

Kevin J Gearhardt

Hoang P Nguyen

Regina Tien Schmidt

Omid Rowhani

Steven L Howard

Sangjune Park

James C Pattison

Gerald L Shipley

Norman E Mause

Richard A Laubhan

Steve Howard

Charles P Tung

Jeffrey P Burleson

Te-Hsuan Chen

Mark W Jetton

Catherina Simona Matheis Ionescu

Wenyi Yin

Chu-Wen Wang

Tanmoy Saha

Derek P Peterson

David M Ratchkov

Larry Greenhouse

Elizabeth C Conrad

Roger D Weir

Charles Tung

The disclosed integrated circuit for offset cross field effect transistors can include a first transistor include a first channel oriented in a first direction; an oxide layer adjacent to the first transistor; and a second transistor adjacent to the oxide layer. The second transistor can include a second channel that is oriented in a direction orthogonal to the first direction, and the first channel and the second channel can be laterally offset such that the second channel does not cross over the first channel. Various other apparatuses, systems, and methods are also disclosed.

Apparatuses and systems for offset cross field-effect transistors

A system and method for laying out power grid connections for standard cells are described. In various embodiments, a standard cell includes power post and ground posts in metal zero. The metal zero posts include no vias to any upper metal layers. Some variations of the standard cell have the power and ground posts routed in metal zero to a boundary edge of the standard cell. Layout rules are changed to allow this type of routing. The power and ground posts in metal zero are connected to power and ground posts in metal zero of a neighboring cell by abutment. The place-and-route tool doesn't need to perform a further routing step after placing the cells. For other variations, the power and ground posts are not routed to the boundary edge and the place-and-route tool routes power and ground connections in metal zero between the standard cell and the neighbor cell.

Metal zero power ground stub route to reduce cell area and improve cell placement at the chip level

A system and method for creating layout for standard cells are described. In various implementations, a standard cell uses Cross field effect transistors (FETs) that include vertically stacked gate all around (GAA) transistors with conducting channels oriented in an orthogonal direction between them. The direction of current flow of the top GAA transistor is orthogonal to the direction of current flow of the bottom GAA transistor. The channels of the vertically stacked transistors use opposite doping polarities. The orthogonal orientation allows both the top and bottom GAA transistors to have the maximum mobility for their respective carriers based on their orientation. The Cross FETs utilize a single metal layer and a single via layer for connections between the top and bottom GAA transistors.

Cross field effect transistors (XFETs) in integrated circuits

A system and method for efficiently creating layout for memory bit cells are described. In various implementations, a memory bit cell uses Cross field effect transistors (FETs) that include vertically stacked gate all around (GAA) transistors with conducting channels oriented in an orthogonal direction between them. The channels of the vertically stacked transistors use opposite doping polarities. The memory bit cell includes one of a read bit line and a write word line routed in no other metal layer other than a local interconnect layer. In addition, a six transistor (6T) random access data storage of the given memory bit cell consumes a planar area above a silicon substrate of four transistors.

Cross FET SRAM cell layout

A system and method for creating chip layout are described. In various implementations, a standard cell uses unidirectional tracks for power connections and signal routing. A single track of the metal one layer that uses a minimum width of the metal one layer is placed within a pitch of a single metal gate. The single track of the metal one layer provides a power supply reference voltage level or ground reference voltage level. This placement of the single track provides a metal one power post contacted gate pitch (CPP) of 1 CPP. To further reduce voltage droop, a standard cell uses dual height and half the width of a single height cell along with placing power posts with 1 CPP. The placement of the multiple power rails of the dual height cell allows alignment of the power rails with power rails of other standard cells.

Standard cell design architecture for reduced voltage droop utilizing reduced contacted gate poly pitch and dual height cells

Manufacturing a semiconductor chip based on redefining tolerance rules to create an otherwise prohibited structure including redefining a tolerance rule to permit creation of a minimum area metal trench structure violating the tolerance rule during a routing operation; and fabricating the minimum area metal trench structure on the semiconductor substrate based on the redefined tolerance rule.

Routing and manufacturing with a minimum area metal structure

A system and method for efficiently creating layout for memory bit cells are described. In various implementations, cells of a library use Cross field effect transistors (FETs) that include vertically stacked gate all around (GAA) transistors with conducting channels oriented in an orthogonal direction between them. The channels of the vertically stacked transistors use opposite doping polarities. A first category of cells includes devices where each of the two devices in a particular vertical stack receive a same input signal. The second category of cells includes devices where the two devices in a particular vertical stack receive different input signals. The cells of the second category have a larger height dimension than the cells of the first category.

Cross field effect transistor library cell architecture design

A system and method for efficiently creating layout for memory bit cells are described. In various implementations, cells of a library use Cross field effect transistors (FETs) that include vertically stacked gate all around (GAA) transistors with conducting channels oriented in an orthogonal direction between them. The channels of the vertically stacked transistors use opposite doping polarities. One or more of these cells use a dual polarity local interconnect power connection to receive a voltage reference level from a backside bus. For example, a power supply reference voltage level is received by a p-type device from a backside bus where the connection traverses both a p-type local interconnect layer and an n-type local interconnect layer.

Cross field effect transistor (XFET) library architecture power routing

Various semiconductor chip metallization layers and methods of manufacturing the same are disclosed. In aspect, a semiconductor chip is provided that includes a substrate, plural metallization layers on the substrate, a first conductor line in one of the metallization layers and a second conductor line in the one of the metallization layers in spaced apart relation to the first conductor line, each of the first conductor line and the second conductor line has a first line portion and a second line portion stacked on the first line portion, and a dielectric layer that has a portion positioned between the first conductor line and a second line, the portion has an air gap.

Semiconductor chip with stacked conductor lines and air gaps

A layout for a 6T SRAM cell array is disclosed. The layout doubles the number of bits per bit cell in the array by implementing dual pairs of bitlines spanning bit cell columns in the array. Alternating connections (e.g., alternating vias) may be provided for wordline access to the bitlines in the layout. Alternating the connections may reduce RC delay in the layout.

Dual-track bitline scheme for 6T SRAM cells

A cell layout implemented in an integrated circuit (IC) includes a first plurality of independent power posts in a first metal layer. Each independent power post of the plurality of independent power posts provides a power connection to one device of a plurality of devices within the cell layout. A source or drain of each device of the plurality of devices is connected to one independent power post of the plurality of independent power posts. The IC further includes a plurality of independent power straps in a second metal layer that is different from the first metal layer. Each independent power strap of the plurality of independent power straps spans across and connects to multiple independent power posts of the first plurality of independent power posts.

Inset power post and strap architecture with reduced voltage droop

A layout for a 6T SRAM cell is disclosed. The cell layout takes a conventional 6T SRAM cell layout and restructures the layout into a more square cell layout with a single p-channel and a single n-channel across the width of the cell. Restructuring the cell layout reduces the height of wordlines and allows dual wordlines to be placed in the cell to reduce wordline resistance in the cell. Dual pairs of bitlines may also be placed in separate metal layers in the cell layout to reduce bitline resistance.

Folded cell layout for 6T SRAM cell

A system and method for laying out power grid connections for standard cells are described. In various implementations, gate metal is placed over non-planar vertical conducting structures, which are used to form non-planar devices (transistors). Gate contacts connect gate metal to gate extension metal (GEM) above the gate metal. GEM is placed above the gate metal and makes a connection with gate metal through the one or more gate contacts. Gate extension contacts are formed on the GEM above the active regions. Similar to gate contacts, gate extension contacts are formed with a less complex fabrication process than using a self-aligned contacts process. Gate extension contacts connect GEM to an interconnect layer such as a metal zero layer. Gate extension contacts are aligned vertically with one of the non-planar vertical conducting structures. Therefore, in an implementation, one or more gate extension contacts are located above the active region.

Gate contact over active region in cell

A system and method for laying out power grid connections for standard cells are described. In various embodiments, a standard cell uses unidirectional tracks for each of the multiple power vertical metal 3 layer tracks and power horizontal metal 2 tracks. One or more of the multiple vertical metal 3 layer posts are routed with a minimum length based on a pitch of power horizontal metal 2 layer straps. One or more vertical metal 1 posts used for a power connection or a ground connection are routed from a top to a bottom of an active region permitting multiple locations to be used for connections to one of the multiple power horizontal metal 2 layer straps. Two or more power horizontal metal 2 layer straps are placed within a power metal 2 layer track without being connected to one another.

Power grid architecture and optimization with EUV lithography

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Fort Collins, CO, United States of America

Richard Thomas Schultz