National Institute of Standards and Technology

Government of the United States of America, as Represented by the Secretary of Commerce

Sematech, Inc.

Richard M Silver

Robert D Larrabee

Pete Lipscomb

Ravikirran Attota

Ravikiran Attota

Bryan Barnes

A method of imaging critical dimensions by measuring the zeroeth order of diffracted light. The method involves providing a target, directing light onto the target so as to cause the target to diffract the light. The zeroeth order of the diffracted light is collected and analyzed to determine structural features of the target. The target can be an article of manufacture, such as a semiconductor device, or a separate target that is provided or fabricated on an article of manufacture. One of at least the wavelength and the angle at which the light is directed onto the target can be scanned. The target can fill all or only a portion of the field of view.

Zeroeth order imaging

A zero-order overlay target comprises a first zero-order line array fabricated on a first layer of a semiconductor structure, the first zero-order line array having a first pitch, and a second zero-order line array fabricated on a second layer of the semiconductor structure, the second zero-order line array having a second pitch. The second pitch may be different from the first pitch, and a portion of the second zero-order line array may be positioned to become optically coupled to a portion of the first zero-order line array when subject to an overlay measurement. Further, the second pitch may be variable. For example, the variable pitch may comprise a first set of features having a pitch approximately equal to the first pitch, a second set of features having a pitch different from the first pitch, and a third set of features having a pitch approximately equal to the first pitch.

Zero-order overlay targets

Growing community of inventors

Darwood, MD, United States of America

Richard M Silver