Morton International, Inc.

Morton Thiokol Inc.

Richard M Lazarus

Sunit S Dixit

Randall M Kautz

Carla M Bauer

Kenneth L Bell

Edward J Reardon

Thomas A Koes

Randall W Kautz

Thomas P Carter

Grieg B Beltramo

Joseph E Oberlander

Andreas Goehring

Chava Gal

Shulamit Hirsch

John J Grunwald

A positive working deep UV sensitive photoresist which provides improved critical dimension stability during prolonged periods of post exposure delay before baking comprises an acid stable polymer which is insoluble in water but normally soluble in an aqueous alkaline medium, a photoinitiator which generates acid upon exposure to actinic radiation, and a mixed carbonate ester of tertiary butyl alcohol and a polyhydric phenol which is an acid labile compound which inhibits the dissolution of the normally soluble polymer in said alkaline medium.

Deep UV sensitive photoresist resistant to latent image decay

A positive working deep UV sensitive photoresist which provides improved critical dimension stability during prolonged periods of post exposure delay before baking comprises an acid stable polymer which is insoluble in water but normally soluble in an aqueous alkaline medium, a photo acid generator exemplified by the tri-(2,1,4-diazonaphthoquinonesulfonate) ester of 3,5-dinitro-2,6-dimethylol para cresol, and a mixed carbonate ester of tertiary butyl alcohol and a polyhydric phenol which is an acid labile compound which inhibits the dissolution of the normally soluble polymer in said alkaline medium.

Deep UV sensitive resistant to latent image decay comprising a

A positive photoresist of the type containing an alkali-soluble novolac resin and a quinone diazide sensitizer contains a dye of the general formula: ##STR1## wherein R' is lower alkyl, R' is H, alkyl or CO.sub.2 -alkyl, alkyl-CO.sub.2 -alkyl or alkyl-CO.sub.2 -(C.sub.1 -C.sub.3 alkyl-O).sub.n -alkyl (n=1-3) and wherein said dye is compatible with the novolac resin/quinone diazide formulation to at least 0.1 phr. The dye reduces reflective notching. Preferably the photoresist also contain a nitro naphthol dye to reduce the effects of I-Line radiation.

Positive photoresist containing dyes

Novolak resins are provided which are the condensation product of (a) a phenol, phenol derivative, or mixtures thereof, and (b) a mixture of formaldehyde or a formaldehyde precursor and (1) a monohydroxy aromatic aldehyde and wherein at least a portion of the hydroxyl groups thereof are esterified or (2) a mixture of at least one monohydroxy aromatic aldehyde and at least one non-hydroxylic aromatic aldehyde; the novolak resins having a hydroxyl number of from about 120 to about 180 grams of resin per equivalent of hydroxyl. The novolak resins are especially useful in positive photoresist formulations and have enhanced photospeed and film loss characteristics as well as improved thermal stability.

High contrast high thermal stability positive photoresists having

Novolak resins of lowered hydroxyl content and high contrast high

Novolak resins are provided which are the condensation product of (a) a phenol, phenol derivative, or mixtures thereof, and (b) a mixture of formaldehyde or a formaldehyde precursor and an aromatic aldehyde. When the aromatic aldehyde is a monohydroxy aromatic aldehyde, the novolak resin is especially useful in positive photoresist formulations.

Mixed aldehyde novolak resins useful as high contrast high thermal

Compositions and methods for developing quinone diazide positive-working photoresists. The compositions consist essentially of an aqueous solution of a tetraalkylammonium hydroxide and an adjunct having a structure selected from: ##STR1## wherein n is 0 or 1; m is 1 or 2; and each R.sup.1 and R.sup.2 is independently selected from hydrogen, methyl, or ethyl, but in Structure I the two R.sup.2 's are not both ethyl. The methods involve use of this composition to develop the indicated photoresists. The addition of an adjunct of the indicated type prevents the formation of irregular deposits on the edges of unexposed portions of the photoresist lines when the photoresist is developed. Selection of these adjuncts also increases the uniformity of line widths of photoresist lines developed according to the present invention, and increases the process latitude of the developer.

High contrast, positive photoresist developer containing alkanolamine

Method of developing a high contrast, positive photoresist using a

Method of forming a thermally stable mixed aldehyde novolak resin

Positive photoresist compositions are provided which contain

Method of forming resist pattern and thermally stable and highly

Positive photoresist compositions are provided which contain (a) a mixture of mono-, di-, and triesters of 2,3,4-trihydroxybenzophenone and 1,2-naphthoquinone-2-diazo-4-sulfonic acid and (b) a novolak resin selected from resins prepared from a phenolic component having a high p-cresol content or from a mixture of formaldehyde and an aromatic aldehyde.

High sensitivity mid and deep UV resist

High contrast high thermal stability positive photoresists with mixed

Compositions and methods for developing quinone diazide positive-working photoresists. The compositions consist essentially of an aqueous solution of a tetraalkylammonium hydroxide primary alkali and an alkanolamine having the following structure: ##STR1## wherein n is zero or 1, and each R is independently selected from hydrogen, methyl, or ethyl. The methods involve use of this composition to develop the indicated photoresists. The addition of an alkanolamine of the indicated type prevents the formation of irregular deposits on the edges of unexposed portions of the photoresist lines when the photoresist is developed. Selection of these alkanolamines also increases the uniformity of line widths of photoresist lines developed according to the present invention, and increases the process latitude of the developer.

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Mission Viejo, CA, United States of America

Richard M Lazarus