Branson International Plasma Corporation

Richard L Bersin

Michael J Singleton

Frank Scornavacca

Plasma etching device and process in which a chamber is divided into two regions by a perforated screen. Objects to be etched are placed in one region, and a plasma is formed in the other region. Etching occurs in the first region, and structure is included for heating the etched objects in the first region to facilitate the removal of photoresist used to define the areas to be etched.

Plasma etching device and process

Gas plasma process and gas mixture useful for the removal of materials in the manufacture of semiconductor devices. Substrate wafers or other semiconductor devices are exposed to a gaseous plasma containing SiF.sub.4 or SiF.sub.4 and oxygen for a time sufficient to effect a desired removal of material from the wafer or device. The process and gas are particularly suitable for selective etching of Si.sub.3 N.sub.4 and the stripping of photoresist, as well as the etching of materials such as silicon and compounds containing silicon.

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Richmond, CA, United States of America

Richard L Bersin