Clariant Finance (bvi) Limited

Clariant International Ltd

Richard Keosian

Hyun-Nam Yoon

Anthony J East

Iain McCulloch

Ming Kang

A polymer that when used with a suitable photoacid generator (PAG) forms a positive working photoresist. The polymer comprises of a tartaric polyanhydride backbone, an acetal protected 1,2 diol group; and a fused ring acetal group pendant to the backbone. The acetal protected .alpha.-hydroxy anhydride backbone structure, undergoes an efficient photoacid catalyzed cleavage, which gives rise to small molecular weight fragments which are readily dissolved in an aqueous base developer. This high contrast in solubility allows high resolution images to be produced. The fused rings offer etch resistance and can be comprised of either an adamantone or norcamphor ring structure. With the addition of a commercially available photo acid generator, the polymer formulation forms a positive working photoresist that offers high contrast and resolution.

193 nm positive-working photoresist composition

A water soluble polymer that when used with a suitable photoacid generator (PAG) forms a negative working water soluble photoresist. The polymer comprises of a backbone, such as polyvinyl ether, coupled by a linkage group to an acetal protected .beta.-keto acid group. With the addition of a number of commercially available photo acid generators, the polymer formulation forms a negative working photoresist that is water soluble. Exposure to radiation will cause a photoacid catalyzed deprotection of the acetal group, yielding a .beta.-keto acid which, upon heating, will undergo decarboxylation, which results in a water insoluble photoproduct and evolution of CO.sub.2 as a byproduct. This photochemically induced reaction results in a significant change in the polymer solubility parameter, and the product is no longer soluble in water. As this solubility change does not require crosslinking, there will be no swelling of the resist images on exposure to the aqueous base during development, and hence no loss of resolution. This enables the photoresist to be used at fine resolutions at i-line and deep UV wavelengths.

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Nazareth, PA, United States of America

Richard Keosian