Kla-Tencor Technologies Corporation

Clear Logic, Inc.

Richard J Schmidley

Alan H Huggins

John A MacPherson

Tim S Wihl

Stephen Hiebert

Frank Kole

Systems and methods for multi-dimensional metrology and inspection of a specimen such as a bumped wafer are provided. One method includes scanning the specimen with partial oblique illumination to form an image of the structure, either through the normal collection angle or through an oblique collection angle. The method also includes integrating an intensity of the image and determining a height of the structure from the integrated intensity. The integrated intensity may be approximately proportional or inversely proportional to the height of the structure. In addition, the method may include scanning the specimen with bright field illumination to form a bright field image of the specimen. The method may also include determining a lateral dimension of the structure from the bright field image. Furthermore, the method may include detecting defects on the specimen from the bright field image or the obliquely-illuminated image.

Systems and methods for multi-dimensional metrology and/or inspection of a specimen

Systems and methods for assessing a dimension of a feature on a specimen are provided. A system may include an illumination system configured to scan the specimen with light at multiple focal planes substantially simultaneously. The system may also include a collection system that may include multiple collectors. Approximately all light returned from one of the multiple focal planes may be collected by one of the multiple collectors. In addition, the system may include a processor configured to determine a relative intensity of the collected light. The processor may also be configured to assess a dimension of the feature on the specimen in a direction substantially perpendicular to an upper surface of the specimen using the relative intensity.

Systems and methods for multi-dimensional inspection and/or metrology of a specimen

A vertical fuse structure and methods for customization of integrated circuits include a substantially vertically-oriented interconnect structure or &ldquo;fuse&rdquo; which provides for a more densely packed and thus smaller programmable integrated circuit. In a preferred embodiment, a vertical interconnect structure is fabricated by forming a first interconnect layer, forming an insulating layer over the first interconnect layer in which substantially vertically-oriented vias are patterned in contact with the first interconnect layer, filling the vias with a conductive plug, and forming a second interconnect layer over the insulating layer in contact with the conductive plug. The vertical interconnect structure is preferably disconnected by forming a narrow, substantially vertical disconnect cavity through the second interconnect layer and a portion of the conductive plug, thereby removing the connection between the second interconnect layer and the plug.

Vertical fuse structure for integrated circuits and a method of disconnecting the same

A method is provided for making re-usable configuration masks by initially patterning a mask blank using precision mask-making tools. The mask is then covered with an opaque material, and desired configuration points for a particular ASIC are selected with a non-precision laser. After the particular configuration pattern is no longer needed, the remaining opaque material is removed. The mask can then be re-configured for a new design by covering the mask with a new layer of opaque material and selecting new configuration points. Such a mask reduces both time and costs for creating a set of mask designs because a single mask can be re-used for several different designs without the further need of precision mask-making tools.

Growing community of inventors

San Jose, CA, United States of America

Richard J Schmidley