International Business Machines Corporation

Globalfoundries Inc.

Disco Corporation

Sumitomo Bakelite Company Limited

Richard Francis Indyk

Benjamin V Fasano

Scott Ira Langenthal

David Clifford Long

Jon Alfred Casey

Sundar M Kamath

Charles Leon Arvin

Krystyna Waleria Semkow

Donald Rene Wall

Glenn A Pomerantz

Bhupender Singh

Mark J LaPlante

Thomas Anthony Wassick

Brian Richard Sundlof

Robert Anthony Rita

Srinivasa S Reddy

Rao Venkateswara Vallabhaneni

Patrick Anthony Coico

James G Balz

Srinivasa S N Reddy

Kathleen M Wiley

David H Gabriels

Lori A Maiorino

Patrick E Spencer

John Ulrich Knickerbocker

Govindarajan Natarajan

Thomas Weiss

Katsuyuki Sakuma

Krishna Gandhi Sachdev

David L Edwards

Eric D Perfecto

Lewis Sigmund Goldmann

Harry David Cox

Mark William Kapfhammer

John Joseph Garant

Arthur Gilman Merryman

Michael Berger

Steve Ostrander

Charles J Hendricks

Richard Philip Surprenant

Vincent P Peterson

Michael S Cranmer

Richard A Shelleman

Shigefumi Okada

Jerome D Cohen

Anthony K Stamper

Jae-Woong Nah

Edmund Juris Sprogis

Jeffrey Allen Zitz

Deepika Priyadarshini

Spyridon Skordas

Shidong Li

Sarah Huffsmith Knickerbocker

Thomas Edward Lombardi

Ian D Melville

Kevin R Winstel

Kevin M Prettyman

Gaetano Paolo Messina

Christopher Lee Tessler

Daniel P O'Connor

Satoru Katsurayama

Mark O Neisser

Vijay Sukumaran

Brittany L Hedrick

Daisuke Oka

Vladimir Jambrih

Francisco J Lamelas

A multi-die integrated circuit device and a method of fabricating the multi-die integrated circuit device involve a substrate. Two or more dice include components that implement functionality of the multi-die integrated circuit. The components include logic gates. The multi-die integrated circuit device also includes a spacer disposed between the substrate and each of the two or more dice. Each of the two or more dice makes direct electrical contact with the substrate without making direct electrical contact with the spacer through holes in the spacer.

Spacer for die-to-die communication in an integrated circuit and method for fabricating the same

An electronic system includes two integrated circuit (IC) packages that are connected by a package to package (PP) connector. The PP connector may include cabling between a first cabling connector and a second cabling connector. The first cabling connector may be seated to a first carrier connector upon a first IC device carrier of the first IC device package. The second cabling connector may be seated to a second carrier connector upon a second IC device carrier of the second IC device package. The electronic system may further include a heat sink connected to the IC packages, to the first cabling connector, and to the second cabling connector. An IC device may route I/O data through the PP connector, effectively increasing the number of I/O routes.

Polygon integrated circuit (IC) packaging

Semiconductor structures are provided in which a first chip on a substrate has at least one first protruding section, the first protruding section including first interconnect locations, a second chip on the substrate having at least one second protruding section, the second protruding section including second interconnect locations and the first chip and the second chip are arranged such that the first protruding section is interdigitated with the second protruding section.

Fins for enhanced die communication

Spacer for die-to-die communication in an integrated circuit

A substrate includes a plurality of semiconductor chips arranged in a grid pattern and laterally spaced from one another by channel regions. The substrate includes a vertical stack of a semiconductor layer and at least one dielectric material layer embedding metal interconnect structures. The at least one dielectric material layer are removed along the channel regions and around vertices of the grid pattern so that each semiconductor chip includes corner surfaces that are not parallel to lines of the grid pattern. The corner surfaces can include straight surfaces or convex surfaces. The semiconductor chips are diced and subsequently bonded to a packaging substrate employing an underfill material. The corner surfaces reduce mechanical stress applied to the metal interconnect layer during the bonding process and subsequent thermal cycling processes.

Stress-resilient chip structure and dicing process

Edge trim processes in 3D integrated circuits and resultant structures are provided. The method includes trimming an edge of a wafer at an angle to form a sloped sidewall. The method further includes attaching the wafer to a carrier wafer with a smaller diameter lower portion of the wafer bonded to the carrier wafer. The method further includes thinning the wafer while it is attached to the wafer.

Edge trim processes and resultant structures

The present disclosure relates to semiconductor structures and, more particularly, to dicing channels used in the singulatation process of interposers and methods of manufacture. The structure includes: one or more redistribution layers; a glass interposer connected to the one or more redistribution layers; a channel formed through the one or more redistribution layers and the glass interposer core, forming a dicing channel; and polymer material conformally filling the channel.

Dicing channels for glass interposers

A semiconductor device and a stacked pillar used to interconnect a first semiconductor die and a second semiconductor die are provided. The semiconductor device has a substrate, a splice interposer, a first semiconductor die, a second semiconductor die and first to fourth plurality of pillars. The first to fourth plurality of pillars and the splice interposer form interconnection and wiring between the first semiconductor die, the second semiconductor die and the substrate. The stacked pillar has a first conductor layer formed on a surface of the first semiconductor die, a first solder layer formed on the first conductor layer, a second conductor layer formed on the first solder layer, and a second solder layer formed on the second conductor layer. The second solder layer is heat-reflowable to attach the stacked pillar to a surface of the second semiconductor.

Structure for establishing interconnects in packages using thin interposers

A method of interconnecting first and second semiconductor dies is provided. A splice interposer is attached to a top surface of a substrate through first pillars formed on a bottom surface of the splice interposer. The first semiconductor die is attached to the top surface of a substrate through second pillars formed on a bottom surface of the first semiconductor die. The first semiconductor die is attached to a top surface of the splice interposer through third pillars formed on the bottom surface of the first semiconductor. The second semiconductor die is attached to the top surface of the splice interposer through fourth pillars formed on a bottom surface of the second semiconductor die. The first to fourth plurality of pillars and the splice interposer form interconnection and wiring between the first semiconductor die, the second semiconductor die and the substrate.

Method for establishing interconnects in packages using thin interposers

In one embodiment, a dielectric material layer embedding metal structures is ablated from the chip-containing substrate by laser grooving, which is performed on dicing channels of the chip-containing substrate. Subsequently, an underfill layer is formed over the dielectric material layer in a pattern that excludes the peripheral areas of the chip-containing substrate. The physically exposed dicing channels at the periphery can be employed to align a blade to dice the chip-containing substrate. In another embodiment, an underfill layer is formed prior to any laser grooving. Mechanical cutting of the underfill layer from above dicing channels is followed by laser ablation of the dicing channels and subsequent mechanical cutting to dice a chip-containing substrate.

Wafer dicing employing edge region underfill removal

A method is provided for the removal of tin or tin alloys from substrates such as the removal of residual tin solder from the molds used in the making of interconnect solder bumps on a wafer or other electronic device. The method is particularly useful for the well-known C4NP interconnect technology and uses an etchant composition comprising cupric ions and HCl. Cupric chloride and cupric sulfate are preferred. A preferred method regenerates cupric ions by bubbling air or oxygen through the etchant solution during the cleaning process.

High tin solder etching solution

A method and structure of improving thermal dissipation from a module assembly include attaching a first side of at least one chip to a single chip carrier, the at least one chip having a second side opposite of the first side; grinding the second side of the at least one chip to a desired surface profile; applying a heat transfer medium on at least one of a heat sink and the second side of the at least one chip; and disposing the heat sink on the second side of the at least one chip with the heat transfer medium therebetween defining a gap between the heat sink and the second side of the at least one chip. The gap is controlled to improve heat transfer from the second side of the at least one chip to the heat sink.

Method and structure to improve thermal dissipation from semiconductor devices

A multilayer ceramic repair process which provides a new electrical repair path to connect top surface vias. The repair path is established between a defective net and a redundant repair net contained within the multilayer ceramic substrate. The defective net and the repair net each terminate at surface vias of the substrate. A laser is used to form post fired circuitry on and in the substrate. This is followed by the electrical isolation of the defective net from the electrical repair structure and passivation of the electrical repair line.

Electronic package repair process

The present invention provides a method for producing a temporary chip carrier for semiconductor chip burn-in test and speed sorting. A multi-layered substrate or card, usually comprised of one of various materials is made by offsetting the conductor-filled vias or holes in the outer few layers with the outer most layer not being filled with a conductor, such that a partially filled via or hole is produced. This effectively produces a smaller surface conductor feature, on which the semiconductor chip is temporarily attached, electrically tested, and subsequently removed using various methods, at forces much lower than normal chip removal processes require.

Method to produce low strength temporary solder joints

Growing community of inventors

Wappingers Falls, NY, United States of America

Richard Francis Indyk