Branson International Plasma Corporation

Dionex Corporation

Richard F Reichelderfer

Richard L Bersin

Marian C Tang

Diane C Vogel

James F Battey

John T Davies

Joseph M Welty

James H Junkin

Process and gas mixture for etching aluminum in a plasma environment in a planar reactor. The gas mixture comprises a primary etching gas and a secondary gas which controls the anisotropic character of the etch. A stable uniform plasma is generated at relatively high pressure and power levels, and this provides substantially faster removal of aluminum than has heretofore been possible in planar reactors.

Process and gas mixture for etching aluminum

Process and gas mixture for etching silicon dioxide and/or silicon nitride in a plasma environment in a planar reactor. The gas mixture comprises a primary etching gas and a secondary gas which controls the selectivity of the etch. The process is carried out at relatively high pressure and power levels and provides substantially faster removal of silicon dioxide and/or silicon nitride than has heretofore been possible in planar reactors.

Process and gas mixture for etching silicon dioxide and silicon nitride

Automated reactor system and process for etching or otherwise processing semiconductor wafers in a plasma environment. The wafers are carried into and out of a reaction chamber by a conveyor and processed on an individual basis. Within the chamber, an electrode mounted on a swinging arm carries each wafer from the conveyor to a processing position adjacent to a stationary electrode. Gas is admitted to the chamber, and the electrodes are energized to ionize the gas and form a plasma for processing the wafer between the electrodes.

Computer controlled system for processing semiconductor wafers

Process and apparatus for carrying out a reaction, such as etching aluminum, in the glow discharge of a gas plasma. The plasma is formed between a pair of closely spaced electrodes, and a distributed impedance is provided in series with the plasma to assure uniform distribution of the ionizing current and the glow discharge of the plasma throughout the region between the electrodes.

Gas plasma reactor and process

Process for etching SiO.sub.2 with hydrogen fluoride gas, utilizing an organic material such as negative photoresist as a catalyst. In one embodiment, the negative photoresist is applied directly to the portions of the SiO.sub.2 to be removed, and in another the negative photoresist is spaced away from the SiO.sub.2. In some embodiments, positive photoresist is applied to the portions of the SiO.sub.2 which are to be retained.

Growing community of inventors

Castro Valley, CA, United States of America

Richard F Reichelderfer