Other

Harris Corporation

Richard Douglas Stokes

John M Neilson

Christopher L Rexer

Louise E Skurkey

Linda Susan Brush

John Lawrence Benjamin

Christopher Boguslaw Kocon

Anup Bhalla

Frank Stensney

Christopher Boguslow Kocon

Christopher Michael Scarba

John Manning Neilson

Christopher Lawrence Rexer

Louis Ellen Skurkey

A method of fabricating a MOS-gated semiconductor device in which arsenic dopant is implanted through a mask to form a first layer, boron dopant is implanted through the mask to form a second layer deeper than the first layer, and in which a single diffusion step diffuses the implanted arsenic and the implanted boron at the same time to form a P+ body region with an N+ source region therein and a P type channel region.

Method of making a MOS-gated semiconductor device with a single diffusion

A gate electrode control structure of an MOS-gated semiconductor device includes four doped regions including a first (source) region forming a first P-N junction with an enclosing composite region comprising a second, lightly doped (channel) region wholly enclosing a third heavily doped (body) region partly enclosing the first region, and a fourth (drain) region forming a P-N junction with the third region. The gate electrode control structure is fabricated using known gate electrode self-alignment doping processes but wherein, in the process for forming the third heavily doped region, a spacer layer is provided on the gate electrode for defining a spacing between the third region and the channel region with an improved degree of precision.

Method of making MOS-gated semiconductor devices

Growing community of inventors

Shavertown, PA, United States of America

Richard Douglas Stokes