The Boc Group, Inc.

Edwards Limited

Linde Gmbh

Richard A Hogle

Ce Ma

Patrick Joseph Helly

Peter Harold Buckley

Andrew James Seeley

Christopher Mark Bailey

Walter H Whitlock

Qing Min Wang

Graham Hodgson

Michael Andrew Galtry

David W Birch

Edward Frederick Ezell

Kenneth William Cross

Kenneth Allen Aitchison

James G Marsh

Prakash Thomas

David Engerran

Geoffrey Young

Noel James Leeson

Laura Joy Miller

Jack B Wert

Kazuya Inoue

Graham A McFarlane

Michael Alan Eric Wilders

A method is described of treating a gas stream exhausted from an atomic layer deposition (ALD) process chamber to which two or more gaseous precursors are alternately supplied. Between the process chamber and a vacuum pump used to draw the gas stream from the chamber, the gas stream is conveyed to a gas mixing chamber, to which a reactant is supplied for reacting with one of the gaseous precursors to form solid material. The gas stream is then conveyed to a cyclone separator to separate solid material from the gas stream. By deliberately reacting a non-reacted precursor to form solid material upstream from the pump, reaction within the pump of the non-reacted precursor and a second non-reacted precursor subsequently drawn from the chamber by the pump can be inhibited.

Method of treating a gas stream

A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.

Method and apparatus for using solution based precursors for atomic layer deposition

A method and apparatus is disclosed for producing fluorine by providing a contained fluorine precursor source located proximate to or remotely from an adsorbent bed, optionally in a replaceable unit that may be a replaceable module comprising both the fluorine source and the adsorbent bed. Fluorine derived preferably from a nitrogen trifluoride source and used to remove deposited silicon-containing impurities in reaction chambers is reclaimed from an adsorbent bed, and made available to the reaction chamber as a supplemental fluorine source to reduce the total required amount of nitrogen trifluoride source gas. The separation column adsorbent is regenerated in cyclical intervals using a reverse flow of inert gas.

Method of recycling fluorine using an adsorption purification process

The use of a polyhedral oligomeric silsesquioxane compound and linking agent to form an ultra low-k dielectric film on semiconductor or integrated circuit surfaces is disclosed. The reaction between the polyhedral oligomeric silsesquioxane compound and linking agent is done in a chemical vapor deposition chamber.

Methods for forming low-k dielectric films

A method and system for thermally activating a oxidizing cleaning gas for use in a semiconductor process chamber cleaning process. The oxidizing cleaning gas is thermally activated by reacting the oxidizing cleaning gas with heated inert gas. The resulting thermally activated oxidizing cleaning gas does not readily deactivate, thus providing enhanced cleaning capabilities.

Thermal activation of fluorine for use in a semiconductor chamber

A valve for use with an ultra high purity gas comprising a valve body defining a valve chamber having a valve outlet through which gas is discharged and containing a reciprocable sealing member, characterized in that the valve chamber is in fluid communication with a source of the gas and in that the sealing member is reciprocable along an axis substantially parallel to the direction of flow of gas discharged from the valve outlet and into and out of sealing contact with a sealing face located within the valve chamber and circumscribing the inlet end of a valve outlet pipe, the opposite, outlet end of which pipe forms the valve outlet. The valve has a low wetted area and is thus easy to purge, and the valve design both reduces wear and restricts it to a single component which is easily replaced when necessary.

Valve for use with high purity gas

A method of forming a seamless cylinder shell in which a layer of nickel is electroplated on a steel sheet so that a composite sheet is formed. The composite sheet is then preferably cut into a circular blank before further processing. The circular blank is subjected to an oxalic acid pretreatment for the nickel side and a zinc phosphate pretreatment for the steel side to retain a lubricant on the two opposed surfaces thereof and is thereafter lubricated with the lubricant. The circular blank is preferably cupped, relubricated, and drawn into the seamless cylinder shell. The seamless cylinder shell can be finished into a seamless gas cylinder by spinning one end of the cylinder into a cylinder head, internally threading the formed cylinder head, and then heat treating the cylinder.

Seamless cylinder shell construction

Growing community of inventors

Oceanside, CA, United States of America

Richard A Hogle