Kla Tencor Corporation

Kla-tencor Technologies Corporation

Rex Runyon

Jamie Michael Sullivan

Wenjian Cai

Dieter Wilk

Meier Yitzhak Brender

Ralph T Johnson

Marian Mankos

Gary Janik

Xinrong Jiang

Robert M Danen

Grace Hsiu-Ling Chen

Mark Shi Wang

Liqun Han

Kai Cao

Qiang Q Zhang

Yevgeniy Churin

Steve Yifeng Cui

Mikhail Haurylau

Eric Vella

Anlun Tang

Steve Short

Suwipin Martono

Shobhit Verma

Mehdi Vaez-Iravani

Guoheng Zhao

John D Greene

Carmela Moreno

Eric N Vella

Dieter E Wilk

A method of scanning a sample includes simultaneously forming a plurality of co-linear scans. Each scan is formed by a sweep of a spot by an acousto-optical device (AOD). The co-linear scans are separated by a predetermined spacing. A first plurality of swaths are formed by repeating the simultaneous forming of the plurality of co-linear scans in a direction perpendicular to the co-linear scans. The first plurality of swaths have an inter-swath spacing that is the same as the predetermined spacing. The predetermined spacing can be a scan length or an integral number of scan lengths. A second plurality of swaths can be formed adjacent to the first plurality of swaths. Forming the second plurality of swaths can be performed in an opposite direction to that of the first plurality of swaths or in a same direction. An inspection system can implement this method by including a diffractive optical element (DOE) path after a magnification changer.

Interleaved acousto-optical device scanning for suppression of optical crosstalk

An inspection system with selectable apodization includes a selectably configurable apodization device disposed along an optical pathway of an optical system. The apodization device includes one or more apodization elements operatively coupled to one or more actuation stages. The one or more actuation stages are configured to selectably actuate the one or more apodization elements along one or more directions. The inspection system includes a control system communicatively coupled to the one or more actuation stages. The control system is configured to selectably control an actuation state of at the one or more apodization elements so as to apply a selected apodization profile formed with the one or more apodization elements.

System and method for apodization in a semiconductor device inspection system

A method of scanning a sample includes simultaneously forming a plurality of co-linear scans. Each scan is formed by a sweep of a spot by an acousto-optical device (AOD). The co-linear scans are separated by a predetermined spacing. A first plurality of swaths are formed by repeating the simultaneous forming of the plurality of co-linear scans in a direction perpendicular to the co-linear scans. The first plurality of swaths have an inter-swath spacing that is the same as the predetermined spacing. A second plurality of swaths can be formed adjacent to the first plurality of swaths. Forming the second plurality of swaths can be performed in an opposite direction to that of the first plurality of swaths or in a same direction. An inspection system can implement this method by including a diffractive optical element (DOE) path after a magnification changer.

An inspection system with selectable apodization includes an illumination source configured to illuminate a surface of a sample, a detector configured to detect at least a portion of light emanating from the surface of the sample, the illumination source and the detector being optically coupled via an optical pathway of an optical system, a selectably configurable apodization device disposed along the optical pathway, wherein the apodization device includes one or more apodization elements operatively coupled to one or more actuation stages configured to selectably actuate the one or more apodization elements along one or more directions, and a control system communicatively coupled to the one or more actuation and configured to selectably control apodization of illumination transmitted along the optical pathway by controlling an actuation state of the one or more apodization elements.

In one embodiment, a first vacuum chamber of an electron beam column has an opening which is positioned along an optical axis so as to pass a primary electron beam that travels down the column. A source that emits electrons is positioned within the first vacuum chamber. A beam-limiting aperture is configured to pass a limited angular range of the emitted electrons. A magnetic immersion lens is positioned outside of the first vacuum chamber and is configured to immerse the electron source in a magnetic field so as to focus the emitted electrons into the primary electron beam. An objective lens is configured to focus the primary electron beam onto a beam spot on a substrate surface so as to produce scattered electrons from the beam spot. Controllable deflectors are configured to scan the beam spot over an area of the substrate surface. Other features and embodiments are also disclosed.

Electron beam column and methods of using same

One embodiment relates to an electron-beam apparatus for defect inspection and/or review of substrates or for measuring critical dimensions of features on substrates. The apparatus includes an electron gun and an electron column. The electron gun includes an electron source configured to generate electrons for an electron beam and an adjustable beam-limiting aperture which is configured to select and use one aperture size from a range of aperture sizes. Another embodiment relates to providing an electron beam in an apparatus. Advantageously, the disclosed apparatus and methods reduce spot blur while maintaining a high beam current so as to obtain both high sensitivity and high throughput.

High-sensitivity and high-throughput electron beam inspection column enabled by adjustable beam-limiting aperture

A multi-spot scanning technique using a spot array having a predetermined gap between spots can advantageously provide scalability to a large number of spots as well as the elimination of cross-talk between channels. The multi-spot scanning technique can select a number of spots for the spot array (1D or 2D), determine a separation between the spots to minimize crosstalk, and perform a scan on a wafer using the spot array and a full field of view (FOV). Performing the scan includes performing a plurality of scan line cycles, wherein each scan line cycle can fill in gaps left by previous scan line cycles. This 'delay and fill' scan allows large spacing between spots, thereby eliminating cross-talk at the detector plane. In one embodiment, the scan is begun and ended outside a desired scan area on the wafer to ensure full scan coverage.

Multi-spot scanning system and method

Disclosed are mechanisms for selectively filtering spatial portions of light emanating from a sample under inspection within an optical system. In one embodiment, a programmable spatial filter (PSF) is constructed from materials that are compatible with light in a portion of the UV wavelength range. In a specific implementation, the PSF is constructed from a UV compatible material, such as a polymer stabilized liquid crystal material. In a further aspect, the PSF also includes a pair of plates that are formed from a UV grade glass. The PSF may also include a relatively thin first and second ITO layer that results in a sheet resistance between about 100 and about 300 &OHgr; per square. The PSF provides selective filtering in two directions. In other words, the PSF provides two dimensional filtering.

Two-dimensional UV compatible programmable spatial filter

Disclosed are mechanisms for selectively filtering spatial portions of light emanating from a sample under inspection within an optical system. In one embodiment, a programmable spatial filter (PSF) is constructed from materials that are compatible with light in a portion of the UV wavelength range. In a specific implementation, the PSF is constructed from a UV compatible material, such as a polymer stabilized liquid crystal material. In a further aspect, the PSF also includes a pair of plates that are formed from a UV grade glass. The PSF may also include a relatively thin first and second ITO layer that results in a sheet resistance between about 100 and about 300 &OHgr; per square.

UV compatible programmable spatial filter

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Fremont, CA, United States of America

Rex Runyon