International Business Machines Corporation

Reto R Schlittler

Urs T Duerig

Walter Heinrich Riess

Gerhard Meyer

Hanspeter Ott

Percy Zahl

Michel Despont

Peter Vettiger

Heike E Riel

Siegfried Friedrich Karg

Rolf Allenspach

James K Gimzewski

Roland Germann

Thomas A Jung

James Kazimierz Gimzewski

Graham Cross

Jin Won Seo

Grégoire Genolet

Urs T Dürig

Roland W Germann

A device for patterning structures on a substrate includes an imaging device having a scanning tip, a light emitting device, and a space around the scanning tip. The space comprises a vapor of a material which is suitable for Chemical Vapor Deposition onto the substrate when decomposed. The light emitting device is adapted to emit a light beam, which has an intensity not capable to decompose the vapor, onto the scanning tip in such a way that an electromagnetic field induced by the light beam near the scanning tip is high enough to decompose the vapor.

Device and method for patterning structures on a substrate

The invention provides methods and apparatus for defining a pattern on a substrate. An example apparatus includes: an emission source for directing an emission to the substrate, defining a working position between the emission source and the substrate, at least one shadow mask having one or more apertures and at least one inspection device for inspecting the properties of the substrate and/or the pattern, the inspection device having at least one inspection tool. The shadow mask and the inspection tool are separately provided on a movable portion, so that the shadow mask and the inspection tool are subsequently movable into the working position. The invention is further related to a method for defining a pattern on a substrate.

Defining a pattern on a substrate

A method for forming a microstructures is described. The method comprises: depositing a seed material on a substrate; growing a nanotube from the seed material; depositing microstructure material on the substrate to embed the nanotube in the microstructure material; and, detaching the substrate to release the microstructure. The resulting mictostructure comprises a body portion and a nanotube embedded in the body portion.

Microstructures

Described is an electronic device comprising a junction formed between a first fullerene layer having a first doping concentration and a second fullerene layer having a second doping concentration different from the first doping concentration. The first doping concentration may be zero. The first and/or the second fullerene layer may be a monolayer. The second fullerene layer may comprise an electron donor. One example of such a device is a diode wherein the first fullerene layer is connected to an anode and the second fullerene layer is connected to a cathode. Another example is a field effect transistor wherein the first fullerene layer serves as a gate region and the second fullerene layer serves as a channel region. The second fullerene layer may alternatively comprise an electron acceptor. At least one of the first and second fullerene layers may be formed from C60, or may consist of a single bucky ball.

Electronic devices with fullerene layers

The invention is directed to a method of manufacturing single-walled carbon nanotubes comprising the steps of providing on a substrate at least one pillar comprising alternate layers of a first precursor material comprising fullerene molecules and a second precursor material comprising a catalyst, and heating the at least one pillar in the presence of a first magnetic or electric field. It further is directed to a precursor arrangement for manufacturing single-walled carbon nanotubes comprising on a substrate at least one pillar comprising alternate layers of a first precursor material comprising fullerene molecules and a second precursor material comprising a catalyst. A third aspect is a nanotube arrangement comprising a substrate and thereupon at least one crystal comprising a bundle of single-walled carbon nanotubes with essentially identical orientation and structure.

Crystals comprising single-walled carbon nanotubes

A layer of conformationally adaptive organic molecules are used in epitaxially layered structures to accommodate lattice mismatch between layers at least one of which is of a nonorganic crystalline material. Such a layer on a substrate layer may constitute the epitaxially layered structure or the conformationally adaptive organic molecule layer may be used to accommodate a lattice mismatch between two other layers or the substrate and another layer.

Epitaxially layered structure

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Schonenberg, Switzerland

Reto R Schlittler