Carl Zeiss Smt Gmbh

Renzo Capelli

Markus Koch

Dirk Hellweg

Martin Dietzel

Klaus Gwosch

Walter Pauls

Hendrik Steigerwald

Thomas Scherübl

Frederik Blumrich

Anthony Garetto

Dmitry Simakov

Jan Hendrik Peters

Grizelda Kersteen

When measuring a reflectivity of an object for measurement light, initially the object and a reflectivity measurement apparatus are provided. The latter includes a measurement light source, an object holder for holding the object and a spatially resolving detector for capturing measurement light reflected by the object. A measurement light beam impinges on a section of the object within a field of view of the measurement apparatus. The reflected measurement light coming from the impinged-upon section of the object is captured. A surface area of the captured section is at most 50 μm×50 μm. The measurement is performed by the detector. Next, at least one reflectivity parameter of the object is determined on the basis of an intensity of the captured measurement light. The result is a measurement method and a metrology system operating therewith, whereby reflectivities in particular of very finely structured objects, such as lithography masks, can be measured with sufficient precision.

Method for measuring a reflectivity of an object for measurement light and metrology system for carrying out the method

To determine an imaging quality of an optical system when illuminated by illumination light within a pupil to be measured of the optical system and/or to qualify the phase effect of a test structure, a test structure that is periodic in at least one dimension is initially arranged in an object plane of the optical system. An initial illumination angle distribution for illuminating the test structure with an initial pupil region, whose area is less than 10% of a total pupil area, is specified and the test structure is illuminated thereby in different distance positions relative to the object plane. In this way, an initial measured aerial image of the test structure is determined. Specifying the illumination distribution, illuminating and determining the aerial image are then repeated for a further illumination angle distribution and an imaging contribution of the optical system is determined from a comparison of the measured aerial images, the imaging quality parameter to be determined and/or a complex-valued diffraction spectrum of the test structure being determined from said imaging contribution. A metrology system for carrying out the method comprises a holder for the test structure, an illumination optical unit, a specification device for specifying the illumination angle distributions, the optical system to be examined in respect of its imaging quality, and a spatially resolving detection device for determining aerial images. This yields an improved imaging quality determination method.

Method for determining an imaging quality of an optical system when illuminated by illumination light within a pupil to be measured

In order to determine a production aerial image of an object to be measured as a result of an illumination and imaging with illumination and imaging conditions of an optical production system, firstly a measurement aerial image of the object to be measured is captured. This is carried out with illumination and imaging conditions of an optical measurement system, which conditions include a predefined measurement illumination setting. Data of the measurement aerial image are generated during the capturing. An object structure of the object to be measured is reconstructed from the data of the captured measurement aerial image by use of a reconstruction algorithm. Data of the reconstructed object structure are generated during the reconstructing. A production aerial image is simulated from the data of the reconstructed object structure with the illumination and imaging conditions of the optical production system. Said conditions include a production illumination setting, which is different than the measurement illumination setting. This results in a determining method in which the requirements made of an optical measurement system used in the determining method, even under demanding illumination and imaging conditions of the optical production system, are relaxed.

Method for determining a production aerial image of an object to be measured

To measure an effect of a wavelength-dependent measuring light reflectivity Rof a lithography mask, a measuring light beam is caused to impinge on said lithography mask within a field of view of a measuring apparatus. The measuring light has a wavelength bandwidth between a wavelength lower limit and a wavelength upper limit differing therefrom. The reflected measuring light emanating from an impinged section of the lithography mask is captured by a detector. A filter with a wavelength-dependent transmission within the wavelength bandwidth is introduced into a beam path of the measuring light beam between the measuring light source and the detector. The measuring light reflected by the lithography mask is captured again by the detector once the filter has been introduced. The wavelength-dependent reflectivity R, or an effect of the wavelength-dependent reflectivity Ris determined on the basis of the capture results. In comparison with the prior art, this yields an improved method for measuring an effect of a measuring light reflectivity on a lithography mask. Additionally, a method for measuring an effect of a polarization of measuring light on a measuring light impingement on a lithography mask is specified, wherein as a result of this the effect of the lithography mask on measuring light is made accessible in respect of further optical parameters of a measurement.

Method for measuring an effect of a wavelength-dependent measuring light reflectivity and an effect of a polarization of measuring light on a measuring light impingement on a lithography mask

A metrology system serves for examining objects with EUV measurement light. An illumination optical unit serves for guiding the EUV measurement light towards the object to be examined. The illumination optical unit has an illumination optical unit stop for prescribing a measurement light intensity distribution in an illumination pupil in a pupil plane of the illumination optical unit. An output coupling mirror serves for coupling a part of the measurement light out of an illumination beam path of the illumination optical unit. The output coupling mirror has a mirror surface which is used to couple out measurement light and has an aspect ratio of a greatest mirror surface extent A longitudinally with respect to a mirror surface longitudinal dimension (x) to a smallest mirror surface extent B longitudinally with respect to a mirror surface transverse dimension (y) perpendicular to the mirror surface longitudinal dimension (x). The aspect ratio A/B is greater than 1.1. The result is a metrology system in which a measurement light throughput is optimized even in the simulation or emulation of an imaging optical unit of a projection exposure apparatus having an image-side numerical aperture of greater than 0.5 and in particular in the simulation or emulation of an anamorphic imaging optical unit.

Metrology system for examining objects with EUV measurement light

The invention relates to a method and an apparatus for repairing at least one defect of a photolithographic mask for the extreme ultraviolet (EUV) wavelength range, wherein the method includes the steps of: (a) determining the at least one defect; and (b) ascertaining a repair shape for the at least one defect; (c) wherein the repair shape is diffraction-based in order to take account of a phase disturbance by the at least one defect.

Method and apparatus for repairing defects of a photolithographic mask for the EUV range

For determining a structure-independent contribution of a lithography mask to a fluctuation of the linewidth, recorded 2D intensity distributions () of an unstructured measurement region of a lithography mask are evaluated in a spatially resolved manner.

Method for determining a structure-independent contribution of a lithography mask to a fluctuation of the linewidth

The invention relates to a method for examining a photolithographic mask for the extreme ultraviolet (EUV) wavelength range in a mask metrology apparatus. In this method, at least one structured region of the mask is selected, a scanner photon number in the extreme ultraviolet (EUV) wavelength range for which the mask in the lithographic production run is provided and a metrology photon number in the extreme ultraviolet (EUV) wavelength range with which the measurement is performed are determined. Next, a photon statistics examination mode is established on the basis of the scanner photon number and the metrology photon number and at least one aerial image of the at least one structured region is produced with the mask metrology apparatus.

Method for examining photolithographic masks and mask metrology apparatus for performing the method

For determining a focus position of a lithography mask (e.g., 5), a focus stack of a measurement region free of structures to be imaged is recorded and the speckle patterns of the recorded images are evaluated.

Method for determining a focus position of a lithography mask and metrology system for carrying out such a method

Determining an imaging aberration contribution of an imaging optical unit for measuring lithography masks involves firstly focus-dependently measuring a 3D aerial image of the imaging optical unit as a sequence of 2D intensity distributions in different measurement planes in the region of and parallel to an image plane of an imaging of an object by use of the imaging optical unit. A spectrum of a speckle pattern of the 3D aerial image is then determined by Fourier transformation of the measured 2D intensity distributions having speckle patterns. For a plurality of spectral components in the frequency domain, a focus dependence of a real part RS(z) and an imaginary part IS(z) of said spectral component is then determined. From the determined values of the focus dependence of the real part RS(z) and the imaginary part IS(z), a contribution made to the speckle pattern spectrum by a mask structure, which contribution is to be eliminated, is then separated from an imaging aberration contribution made to the speckle pattern spectrum by the imaging optical unit. The imaging aberration contribution is then represented. This results in a method for determining the imaging aberration contribution of the imaging optical unit having little additional time expenditure in comparison with the measurement time on the respective lithography mask.

Method for determining an imaging aberration contribution of an imaging optical unit for measuring lithography masks

A reflective mask inspection system comprises a short wavelength radiation source for irradiating a reflective mask. A detector system detects the short wavelength radiation reflected from the reflective mask and a controller compares reflectance images of the reflective mask from the detector to characterize the mask. The system analyzes the spatially resolved reflectance characteristics of the substrate from different angles with respect to normal to the substrate and/or at different angles of rotation of the substrate. This information can be used to then analyze the mask for buried defects and then characterize those defects. This technique improves over current systems that rely on atomic force microscopes, which can only provide surface information.

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Heidenheim, Germany

Renzo Capelli