Advanced Technology Materials, Inc.

International Business Machines Corporation

Renjie Zhou

Michael B Korzenski

Thomas H Baum

Emanuel Israel Cooper

Mahmoud M Khojasteh

David Daniel Bernhard

George Gabriel Totir

Ping Jiang

Melissa K Rath

Julie Cissell

A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.

Metals compatible post-etch photoresist remover and/or sacrificial antireflective coating etchant

A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).

Low pH mixtures for the removal of high density implanted resist

Growing community of inventors

Dayton, NJ, United States of America

Renjie Zhou